Journal
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume 184, Issue 11-12, Pages 547-550Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.elspec.2011.09.002
Keywords
SrFeO2; Epitaxial thin films; Electronic states; Optical gap; Photoemission spectroscopy; X-ray absorption spectroscopy
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Funding
- Institute of Materials Structure Science in KEK [2009G085, 2008S2-003]
- Core Research for Evolutional Science and Technology, the Japan Science and Technology Agency (CREST-JST)
- Global Centers of Excellence (GCOE) Program for Chemistry Innovation
- Grants-in-Aid for Scientific Research [22224005] Funding Source: KAKEN
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We investigated the electronic states of a single-crystal SrFeO2 epitaxial thin film in the valence-band and conduction-band regions using synchrotron-radiation X-ray photoemission and absorption spectroscopies. Fe 2p-3d resonant photoemission measurements revealed that the Fe 3d states have higher densities of states at binding energies of 3-5 eV and 5-8.5 eV in the valence-band region. The O K-edge X-ray absorption spectrum exhibited three peaks in the Fe 3d-derived conduction band hybridized with O 2p states; these can be assigned to Fe 3d(xy), 3d(x2) + 3d(yx), and 3d(x2-y2). In addition, the indirect bandgap value of the SrFeO2 film was determined to be 1.3 eV by transmission and absorption spectroscopies. (C) 2011 Elsevier B.V. All rights reserved.
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