Journal
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume 185, Issue 11, Pages 512-517Publisher
ELSEVIER
DOI: 10.1016/j.elspec.2012.10.007
Keywords
Photoelectron diffraction; GaAs(001); Si(001); Semiconductor surfaces; Electron attenuation length
Categories
Funding
- Praemium Academiae award of the Academy of Sciences of the Czech Republic (ASCR) [M100101201]
- Grant Agency of the Czech Republic [P204/10/P028]
- Ministry of Education, Youth, and Sports of the Czech Republic [LM2010005]
Ask authors/readers for more resources
Photoelectron diffraction in the layer-resolved mode brings more detailed information about local atomic arrangement than is obtained in the standard mode. This is demonstrated in crystals with diamond and zinc-blende structures, both for unpolarized photon excitation as well as for circularly polarized excitation. The full angular distributions of photoemission intensities are evaluated for large atomic clusters representing ideally truncated surfaces of Si(0 0 1) and GaAs(0 0 1). Highly structured layer-resolved patterns enable a more detailed understanding of the standard mode outcomes. Photoelectron intensities from atomic layers placed at different depths under the crystal surface provide direct evidence about electron attenuation and its anisotropy in crystals. (C) 2012 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available