Journal
JOURNAL OF ELECTRON MICROSCOPY
Volume 59, Issue -, Pages S175-S181Publisher
OXFORD UNIV PRESS
DOI: 10.1093/jmicro/dfq045
Keywords
scanning electron microscopy; dislocations; channelling contrast; diffraction; semiconductor materials; metal materials
Categories
Ask authors/readers for more resources
Scanning electron microscope (SEM) image contrasts have been investigated for dislocations in semiconductor and metal materials. It is revealed that single dislocations can be observed in a high contrast in SEM images formed by backscattered electrons (BSE) under the condition of a normal configuration of SEM. The BSE images of dislocations were compared with those of the transmission electron microscope and scanning transmission electron microscope (STEM) and the dependence of BSE image contrast on the tilting of specimen was examined to discuss the origin of image contrast. From the experimental results, it is concluded that the BSE images of single dislocations are attributed to the diffraction effect and related with high-angle dark-field images of STEM.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available