Journal
JOURNAL OF ELECTROCERAMICS
Volume 28, Issue 2-3, Pages 158-164Publisher
SPRINGER
DOI: 10.1007/s10832-012-9698-3
Keywords
Ferroelectric; SBT; BaZrO3; Memory window; MFIS
Categories
Funding
- Ministry of Education of Japan
- Japan Society for the Promotion of Science (JSPS)
- Fujitsu Laboratories Ltd
- Scientific and Technological Research Council of Turkey (TUBITAK)
Ask authors/readers for more resources
Electrical characteristics of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric films grown on HfO2/Si wafers by sol-gel spin coating technique were investigated from the viewpoint of application as ferroelectric gates in metal-ferroelectric-insulator-semiconductor (MFIS) stacks. It was observed that the leakage current density level was 10(-8) A/cm(2) under 14 V for moderate doping ratio. Determined memory windows from C-V characteristics of Sr0.8Bi2.2Ta2O9 (SBT) and Sr0.8-xBaxBi2.2Ta2-yZryO9 (x = 0.04, 0.08, 0.12 and y = 0.1, 0.2, 0.3) are 0.59, 0.65, 0.75, and 0.86 V at gate sweeping bias of 5 V, respectively. Some part of electronic properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 with the objective to enhance memory window up to 45 % were discussed. It was interpreted that defects which are formed in Ba and Zr modified SBT affected the electronic processes like leakage current, memory window and charge trapping.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available