InGaN-Based Resonant-Cavity Light-Emitting Diodes Fabricated With a ${\hbox{Ta}}_{2}{\hbox{O}}_{5}/{\hbox{SiO}}_{2}$ Distributed Bragg Reflector and Metal Reflector for Visible Light Communications

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Title
InGaN-Based Resonant-Cavity Light-Emitting Diodes Fabricated With a ${\hbox{Ta}}_{2}{\hbox{O}}_{5}/{\hbox{SiO}}_{2}$ Distributed Bragg Reflector and Metal Reflector for Visible Light Communications
Authors
Keywords
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Journal
Journal of Display Technology
Volume 9, Issue 5, Pages 365-370
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-12-04
DOI
10.1109/jdt.2012.2224843

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