Modelling of X-ray diffraction curves for GaN nanowires on Si(111)

X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(1 1 1) substrates were examined theoretically and experimentally. Numerical simulation shows how distribution of such NWs parameters as diameter, length, strain and orientation influence broadening of X-ray diffraction peak profiles. Calculated shape of symmetric 0002 GaN reciprocal space map well correlates with experimental result, which indicates the validity of selected theoretical model. (C) 2014 Elsevier B.V. All rights reserved.