Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

Published 2013 View Full Article

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Title
Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 378, Issue -, Pages 254-258
Publisher
Elsevier BV
Online
2013-01-04
DOI
10.1016/j.jcrysgro.2012.12.087

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