Journal
JOURNAL OF CRYSTAL GROWTH
Volume 375, Issue -, Pages 104-107Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.04.028
Keywords
Characterization; Growth models; Pulsed laser deposition; Zinc compounds; Semiconducting II-VI materials
Funding
- National Natural Science Foundation of China [51172204, 51002134]
- Zhejiang Provincial Public Technology Research of China [2012C21114]
- Ministry of Education of China [2011010110013]
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Non-polar Zn1-xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The effects of oxygen pressure on Cd content in the Zn1-xCdxO thin films are discussed. Single-phase Zn1-xCdxO thin films with a band gap of about 3.01 eV at room temperature are achieved by incorporating 13 at% Cd content. Based on the X-ray diffraction analysis, the Zn1-xCdxO films with Cd content below 7.2 at% exhibit unique non-polar < 11 (2) over bar0 > orientation, while the films with Cd content above 7.2 at% present < 0 0 0 1 > and < 11 (2) over bar0 > mixed orientations. The surface of Zn1-xCdxO film with pure a-plane orientation shows highly anisotropic morphology with stripes elongated along the c-axis. (C) 2013 Elsevier B.V. All rights reserved.
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