Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy

Published 2013 View Full Article

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Title
Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 380, Issue -, Pages 61-67
Publisher
Elsevier BV
Online
2013-06-06
DOI
10.1016/j.jcrysgro.2013.05.030

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