Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol–gel process

Published 2011 View Full Article

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Title
Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol–gel process
Authors
Keywords
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Journal
JOURNAL OF CRYSTAL GROWTH
Volume 326, Issue 1, Pages 175-178
Publisher
Elsevier BV
Online
2011-02-03
DOI
10.1016/j.jcrysgro.2011.01.091

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