Article
Crystallography
Satoshi Nakano, Xin Liu, Xue-Feng Han, Koichi Kakimoto
Summary: This study investigated the effect of evaporation flux on phosphorus concentration distribution in silicon crystal by numerical analysis, finding that controlling phosphorus evaporation flux can achieve a homogeneous phosphorus concentration distribution.
Article
Crystallography
Patricia Krenckel, Yusuke Hayama, Florian Schindler, Theresa Troetschler, Stephan Riepe, Noritaka Usami
Summary: The study demonstrates the feasibility of the SMART approach on larger ingots, which successfully limits the generation of structural defects by maintaining the monocrystalline structure using functional defects, resulting in increased monocrystal area and electrical material quality.
Article
Crystallography
G. Anbu, M. Srinivasan Supervisor, G. Aravindan, M. Avinash Kumar, P. Ramasamy, Niefeng Sun, Tongnian Sun, Zaoyang Li
Summary: In this study, the bottom-opening directional solidification technique was used to grow multicrystalline silicon ingot. The variation in impurity concentration was analyzed by altering the Si3N4 coating thickness on the quartz crucible, and heat and mass transfer within the solidification furnace were simulated using axis-symmetric time-dependent 2D modeling. It was found that the concentration of oxygen and carbon impurities in the grown silicon ingots varied with the thickness of Si3N4 coating, and the minority carrier lifetime was higher in the middle wafer compared to the top and bottom wafers.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
T. Keerthivasan, Xin Liu, M. Srinivasan, Noritaka Usami, G. Anbu, G. Aravindan, P. Ramasamy
Summary: Numerical simulations were used to investigate the growth of multicrystalline silicon. By partially replacing the bottom of the susceptor with an insulation block, a better quality and lower power consumption multicrystalline silicon ingot was obtained.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Crystallography
Hiroya Iwashiro, Koji Sueoka, Kazuhisa Torigoe, Toshiaki Ono
Summary: In this study, density functional theory calculations were used to evaluate the dependence of impurities and dopants on the formation energy, volume change, and formation enthalpy in stressed Si crystals. It was found that the dominant factor in the change of formation enthalpy was the volume change. The results obtained can be useful for controlling impurities and dopants behavior in stressed Si crystals.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Physics, Fluids & Plasmas
E. S. Nani, Britta Nestler
Summary: The asymptotic analysis of multi-phase-field models is often not rigorously performed, and the justification for certain model assumptions is usually heuristic. The transition from an initial filling to a state characterized by separated bulk phases is rarely addressed, and there is a lack of detailed numerical studies on the predicted asymptotic laws.
Article
Crystallography
Shashank Shekhar Mishra, Lu-Chung Chuang, Kensaku Maeda, Jun Nozawa, Haruhiko Morito, Kozo Fujiwara
Summary: This study investigates the growth rate of the crystal/melt interface along different crystallographic orientations. By comparing the growth rate on the {110} plane with that on other planes, it is observed that the growth rate on the {110} plane is faster. These differences may be attributed to the growth mode.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Thermodynamics
A. Kondratyev, S. Demina, A. Smirnov, V Kalaev, G. Ratnieks, L. Kadinski, A. Sattler
Summary: The research uses LES/RANS approach to model Cz silicon growth, showing good agreement with experimental data and industrial furnace simulations, accurately predicting interface shape, temperature, and melt parameters. The study finds that crystal rotation rate affects interface shape and oxygen concentration.
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
(2021)
Article
Nanoscience & Nanotechnology
Shaozhou Wang, Tong Xie, Ran Liang, Yu Zhang, Fa-Jun Ma, David Payne, Giuseppe Scardera, Bram Hoex
Summary: The study utilizes artificial intelligence methods to compile a comprehensive evaluation of the performance of black silicon solar cells, finding that the weighted average reflectance is an effective surface metric and demonstrating the potential of black silicon nanotextures for improving solar cell efficiency.
ACS APPLIED NANO MATERIALS
(2022)
Article
Green & Sustainable Science & Technology
Minako Imose, Daigo Araki, Md Azhar Uddin, Yoshiei Kato, Kiyoshi Kinoshita
Summary: The radial directional solidification technique was investigated for recycling kerf loss silicon powder into SOG-Si. The purification behavior of metallic impurities Fe and Ca determined the specific resistivity, with Fe purification being most effective at a solid fraction of 0.8 before rapidly diminishing.
JOURNAL OF SUSTAINABLE METALLURGY
(2022)
Article
Crystallography
Alexandra Popescu, Daniel Vizman
Summary: A numerical model was used to study the time behavior of temperature and oxygen concentration in the Czochralski growth process of silicon single crystals for photovoltaic applications. The study addressed important model issues and conducted a parametrical study to analyze the influence of pulling rate and rotation rate of the crucible on temperature and oxygen concentration fluctuations. The simulations revealed the distributions of temperature and oxygen concentration fluctuations and demonstrated the sensitivity of oxygen concentration to crucible rotation and the stronger effect of pull speed on temperature oscillations.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Materials Science, Multidisciplinary
Keli Liu, Junsheng Wang, Yanhong Yang, Yizhou Zhou, Yuansheng Yang, Chunjie Cao
Summary: Shrinkage microporosity formed during the directional solidification of Ni-based single crystal superalloys can significantly reduce turbine blade fatigue life, potentially leading to catastrophic flight accidents. An integrated mesoscale model combining cellular automaton method and X-ray microtomography characterization successfully predicted the relationship between pore size, percentage, distribution, and directional solidification conditions, revealing the root cause of pore size distributions.
COMPUTATIONAL MATERIALS SCIENCE
(2021)
Article
Instruments & Instrumentation
Jun Dai, Yao-Chung Yang, Chao-Ming Hsu, Hsien-Wei Tseng, Peng Wang, Cheng-Fu Yang
Summary: In this study, numerical analysis was used to optimize the growth of polycrystalline silicon ingots in a directional solidification system. The finite volume method and Fluent software were utilized to simulate the thermal field during solidification process, considering the effects of heat conduction, heat convection, and heat radiation. The simulation technology helped understand the temperature profile effect on the growth characteristics of polycrystalline silicon wafers, allowing for the optimization of the crystal growth process.
SENSORS AND MATERIALS
(2021)
Article
Crystallography
Andrejs Sabanskis, Kaspars Dadzis, Robert Menzel, Janis Virbulis
Summary: Numerical simulations were conducted on the transient temperature field and dislocation density distribution during a silicon crystal heating experiment. Both low- and high-frequency modeling approaches yielded similar results, which were in good agreement with the experiment. An extension of the Alexander-Haasen model successfully explained the observed dislocation distribution, with some remaining shortcomings in the model discussed.
Article
Materials Science, Multidisciplinary
Jingying Xu, Jinwu Kang, Lele Zheng, Weimin Mao, Jiwu Wang
Summary: The application of a multi-shell mold structure in directional solidification is studied, and the insulation effect and solidification front morphology of this structure are simulated and verified through experiments.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2022)
Article
Physics, Applied
Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Satoshi Nakano, Bing Gao, Koichi Kakimoto, Kyotaro Nakamura, Yoshio Ohshita, Atsushi Ogura, Shin Sugawara, Takashi Sekiguchi
APPLIED PHYSICS EXPRESS
(2015)
Article
Crystallography
Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto
CRYSTAL RESEARCH AND TECHNOLOGY
(2015)
Article
Physics, Applied
B. Gao, K. Kakimoto
JOURNAL OF APPLIED PHYSICS
(2015)
Article
Crystallography
B. Gao, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto
JOURNAL OF CRYSTAL GROWTH
(2015)
Article
Crystallography
Xin Liu, Bing Gao, Koichi Kakimoto
JOURNAL OF CRYSTAL GROWTH
(2015)
Article
Energy & Fuels
Karolin Jiptner, Yoshiji Miyamura, Hirofumi Harada, Bing Gao, Koichi Kakimoto, Takashi Sekiguchi
PROGRESS IN PHOTOVOLTAICS
(2016)
Article
Engineering, Multidisciplinary
Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto
Article
Crystallography
S. Araki, B. Gao, S. Nishizawa, S. Nakano, K. Kakimoto
CRYSTAL RESEARCH AND TECHNOLOGY
(2016)
Article
Crystallography
Koichi Kakimoto, Bing Gao, Xin Liu, Satoshi Nakano
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
(2016)
Review
Physics, Applied
Koichi Kakimoto, Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura
JAPANESE JOURNAL OF APPLIED PHYSICS
(2017)
Article
Crystallography
Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto
JOURNAL OF CRYSTAL GROWTH
(2017)
Article
Crystallography
S. Nakano, B. Gao, K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, M. Fukuzawa, K. Kakimoto
JOURNAL OF CRYSTAL GROWTH
(2017)
Article
Crystallography
B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto
JOURNAL OF CRYSTAL GROWTH
(2017)
Article
Crystallography
S. Nakano, B. Gao, K. Kakimoto
JOURNAL OF CRYSTAL GROWTH
(2017)
Proceedings Paper
Physics, Applied
Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8
(2015)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)
