Article
Materials Science, Multidisciplinary
Join Uddin, Mehnaz Sharmin, Mohammed Nasim Hasan, Jiban Podder
Summary: Nanostructured copper oxide and nickel-doped copper oxide thin films were synthesized with varying nickel concentrations and characterized. The nickel doping improved the light absorbance in the visible-NIR region, leading to an increase in the optical bandgap with higher nickel content. The resistivity also increased with the rise in nickel concentration in the copper oxide thin films.
Article
Materials Science, Multidisciplinary
Xin Zhou, ChuanHao Li, Ming Jiang, Tiwei Chen, Wenbo Tang, Yongjian Ma, Kun Xu, Feng Yang, Xiaodong Zhang, Li Zhang, Xinping Zhang, Zhongming Zeng, BaoShun Zhang
Summary: Large wafer-level hexagonal boron nitride (h-BN) film was grown on sapphire using MOCVD in pulse epitaxy mode. Comprehensive material characterizations were performed, revealing that the h-BN film exhibited hexagonal crystal phase with sp2 B-N bond. Unintentionally doped carbon element was found in the h-BN film, and its content was positively correlated with the flow rate of Triethyl-borane (TEB). The phenomenon of two-dimensional interlayer Van der Waals (vdW) characteristics and self-separation of h-BN on sapphire was observed.
Article
Materials Science, Multidisciplinary
Guruprasad Sahoo, Ajit Jena
Summary: This study investigates the electronic properties of pure and iso-electronic element (Ag) doped Cu3N and the effects of strain using density functional calculations. The results suggest that Cu3N is a weakly correlated system and the doping of Ag has little effect on the band gap. However, the doping of Ag can increase carrier mobility and subsequently improve electrical conductivity. The study also shows that the band gap of Cu3N decreases under compressive strain and increases under tensile strain, while the variation of band gap with strain in Cu2AgN is different.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Physics, Condensed Matter
M. A. A. Z. Md Sahar, Z. Hassan, S. S. Ng, N. A. Hamzah, Y. Yusuf, N. N. Novikova, V. A. Yakovlev, S. A. Klimin
Summary: This study demonstrates the growth transition of AlN films from 3D to 2D on a sapphire substrate at different temperatures using MOCVD. The results show that as the temperature increases, the AlN film exhibits a smoother surface and higher crystal quality. The film grown at 1100℃ in the Frank-van der Merwe or 2D growth mode has the highest crystalline quality.
SUPERLATTICES AND MICROSTRUCTURES
(2022)
Article
Chemistry, Multidisciplinary
Weijin Kong, Jicheng Zhang, Deniz Wong, Wenyun Yang, Jinbo Yang, Christian Schulz, Xiangfeng Liu
Summary: By modulating the Co3d and O2p band centers and enlarging their band gap with MgF2 doping, the inhibition of oxygen escape is achieved, enhancing the ionicity of the Co-O bond, resulting in stable LiCoO2 with high capacity retention.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2021)
Article
Materials Science, Multidisciplinary
Xiaolan Du, Chao An, Xuliang Chen, Ying Zhou, Min Zhang, Shuyang Wang, Chunhua Chen, Yonghui Zhou, Xiaoping Yang, Zhaorong Yang
Summary: The structural and electronic properties of CaCdGe, a nodal-line semimetal candidate, were studied under pressure up to 53.3 GPa using synchrotron x-ray diffraction, Raman scattering, electrical transport measurements, and theoretical calculations. Although no clear structural transition was observed, abnormal changes in bond angles and a new Raman peak were found around a certain pressure point (PC). The resistance parameters also showed abrupt changes above PC, suggesting the occurrence of a subtle isostructural transition due to the distortion of CdGe4 tetrahedra.
Article
Chemistry, Physical
Ravi B. Shankar, Elan D. R. Mistry, Daphne Lubert-Perquel, Irena Nevjestic, Sandrine Heutz, Camille Petit
Summary: We have successfully tuned the chemical, magnetic, and optoelectronic properties of oxygen-doped boron nitride (BNO) by using a multivariate synthesis parameter space. We have identified the synthesis parameters that influence these properties and validated them experimentally.
Article
Chemistry, Physical
Dandan Zhu, Qixing Zhou
Summary: In this study, nitrogen-doped g-C3N4 (NCN) with an extremely narrow band gap was prepared and applied to enhance the photocatalytic activity for phenol degradation. Experimental and theoretical results showed that nitrogen doping improved photogenerated carrier separation and charge transfer, leading to increased visible light absorption and enhanced photocatalytic performance. The introduction of foreign atoms in the matrix can be a strategy to enhance the photocatalytic activity of photocatalysts.
APPLIED CATALYSIS B-ENVIRONMENTAL
(2021)
Article
Crystallography
Yangchen Fu, Wenchao Zhang, Zhihua Fan, Hongcheng Jiang, Yuhang Hou, Qiuyu Luo, Yi Wang
Summary: This study investigates the effect of different atoms on the electronic structure and optical properties of hexagonal boron nitride using first-principles calculations. The results show that Cs, Br, and Cs-Br doping can modify the band gap and optical absorption of h-BN, making it more suitable for photoelectric detectors in specific frequency bands.
Article
Materials Science, Multidisciplinary
Shashi Pandey, Alok Shukla, Anurag Tripathi
Summary: This study compares the electrical and optical properties of powder and pellet forms of 3d-doped TiO2. It is observed that both properties change significantly due to external pressure. The experimental band gap obtained from optical absorption spectroscopy is verified through rigorous theoretical calculations. Doping and pressure variation affect the band gap and electrical resistivity.
Article
Materials Science, Ceramics
Dongwen Gao, Li Wang, Xueqiong Su
Summary: This study investigates the influence of different doping ratios on the composition, structure, morphology, and luminescence properties of bulk ceramics, determining the optimum doping ratio in this range. The research enhances the optical performance of the material, suggesting improved microstructural, optical, and electrical properties for potential use in new optoelectronic devices.
CERAMICS INTERNATIONAL
(2021)
Article
Chemistry, Physical
Maciej J. Winiarski
Summary: This study investigated the electronic structures of ternary alloys of group III and rare earth nitrides, revealing that the introduction of rare earth ions can affect the band gap width. The findings suggest potential applications of these materials, encouraging further experimental investigations.
Article
Optics
Darius Dobrovolskas, Arunas Kadys, Alexander Usikov, Tadas Malinauskas, Kazimieras Badokas, Ilja Ignatjev, Sergey Lebedev, Alexander Lebedev, Yuri Makarov, Gintautas Tamulaitis
Summary: Indium nitride epilayers were grown on graphene/SiC substrates with different terrace widths by MOCVD, and their PL properties were studied. It was found that InN on graphene/SiC layers consists of chaotically oriented nanocrystals up to 2 µm thick, transforming into a more homogeneous multicrystalline layer at longer deposition durations. The PL band in thick layers peaked closer to the band gap, indicating a low density of equilibrium electrons, while in thin samples or the lower part of thick samples, the PL band was shifted predominantly by quantum confinement.
JOURNAL OF LUMINESCENCE
(2021)
Article
Materials Science, Ceramics
Lingling Wu, Cuiping Guo, Ruohan Feng, Haoyue Zhang, Nan Shi, Yao Li, Huilan Su, Xinjiang Cui, Fang Song
Summary: This study successfully enhanced the visible light absorption and solar photocatalytic efficiency of TiO2 by codoping phosphonis(V) and Titanium(III) into leaf-architectured TiO2 via a sol-gel biotemplating approach. The codoping strategy led to a 2.6 times higher solar photocatalytic degradation rate compared to commercial TiO2 P25.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2021)
Article
Chemistry, Physical
Xiaojie Wu, Di Li, Bifu Luo, Biyi Chen, Yuanyong Huang, Tingting Yu, Nanjun Shen, Longhua Li, Weidong Shi
Summary: A series of S double-site-doped ultrathin g-C3N4 nanosheets (SUCN) with adjustable intermediate band gap were reported to have light response over NIR region and could effectively generate hydrogen (H2) under NIR-light irradiation.
APPLIED CATALYSIS B-ENVIRONMENTAL
(2023)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)