Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Published 2010 View Full Article

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Title
Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 312, Issue 24, Pages 3569-3573
Publisher
Elsevier BV
Online
2010-09-23
DOI
10.1016/j.jcrysgro.2010.09.036

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