Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire

Authors

Keywords

Journal

Volume 312, Issue 3, Pages 363-367

Publisher

Elsevier BV

Online

2009-11-13

DOI

10.1016/j.jcrysgro.2009.11.014

Discuss science. Find collaborators. Network.

Join a conversation

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now