Article
Crystallography
Yun Lai, Ding Wang, Qinhao Kong, Xiaoju Luo, Jinfeng Tang, Rensuo Liu, Fei Hou, Xianying Wang, Troy J. Baker
Summary: Four-inch semi-insulating free-standing gallium nitride (GaN) wafers grown by hydride vapor phase epitaxy (HVPE) with carbon doping were obtained through a self-separated process. The as-grown wafer thickness can reach 900 mu m without cracks, and x-ray diffraction rocking curves show low FWHMs. The measured resistivity was greater than 10(10) Omega-cm.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Kazuki Ohnishi, Yuki Amano, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano
Summary: This study investigated the electrical properties and structural defects of p-type GaN layers with different Mg doping concentrations grown by HVPE. It was found that high Mg doping concentrations lead to a decrease in hole concentration and the formation of pyramidal inversion domains (PIDs). Energy-dispersive X-ray spectroscopy showed that Mg atoms accumulate in PIDs, inhibiting the increase in acceptor concentration.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Materials Science, Ceramics
Qi Zhanguo, Liu Lei, Wang Shouzhi, Wang Guodong, Yu Jiaoxian, Wang Zhongxin, Duan Xiulan, Xu Xiangang, Zhang Lei
Summary: Compared with previous generations, third generation semiconductor materials, such as gallium nitride (GaN), have superior properties and wide applications in electronic devices, optoelectronics, and power devices. The hydride vapor phase epitaxy (HVPE) method is a promising approach for growing high-quality GaN crystals. However, unintentionally doped GaN obtained by this method shows n-type electrical properties, limiting its use in high-frequency and high-power devices. Doping is a common method to improve the electrical performance of GaN, and this article introduces the structure, properties, and recent advancements in HVPE-grown GaN crystals, as well as the doping characteristics and types, growth process, and the impact of dopants on the electrical properties of GaN. The challenges and opportunities for the HVPE method to grow doped GaN crystals are also discussed.
JOURNAL OF INORGANIC MATERIALS
(2023)
Article
Chemistry, Physical
Axel Stromberg, Yanqi Yuan, Feng Li, Balaji Manavaimaran, Sebastian Lourdudoss, Peng Zhang, Yanting Sun
Summary: Heteroepitaxial Zn-doped p-GaP materials were grown on different substrates using hydride vapor phase epitaxy and processed into photoelectrodes for water splitting and CO2 reduction. The results showed that the heteroepitaxial GaP with suitable Zn doping concentration exhibited comparable photoelectrochemical performance to homoepitaxial GaP, but high defect density was observed in the GaP/Si samples.
Article
Crystallography
Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano
Summary: In this study, the effects of HVPE growth conditions on the surface morphology of n-type GaN layers were investigated. A growth model was proposed to predict the HVPE growth mode.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Physics, Condensed Matter
Kenji Iso, Hirotaka Ikeda, Tae Mochizuki, Takafumi Odani, Satoru Izumisawa
Summary: A new method is proposed to fabricate semi-insulating GaN (SI-GaN) substrates by using a dual-layer structure, including approximately 100 μm-thick Fe, C, or Mn-doped GaN as the upper layer and approximately 300 μm-thick unintentionally doped GaN as the lower layer, via hydride vapor-phase epitaxy. Substrates doped with Fe, C, or Mn are successfully produced without cracks and pits, and the resistivities at room temperature reach up to 6.6 x 10^8, >10^12, and >10^12 Ω·cm, respectively, around a doping concentration of approximately 10^18 cm^(-3). The residual stress of the dual-layer SI-GaN film is also evaluated.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2022)
Article
Physics, Multidisciplinary
Jiafan Chen, Jun Huang, Didi Li, Ke Xu
Summary: This study reports the successful growth of porous AlN films on C-face SiC substrates by HVPE. The influences of growth condition on surface morphology, residual strain, and crystalline quality of AlN films have been investigated. It was found that under the medium V/III ratio growth condition, porous and crack-free AlN films can be obtained.
Article
Chemistry, Physical
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw Skierbiszewski
Summary: Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth, with the role of the adlayer in dopant incorporation in GaN being unexplored. Experimental study shows that the presence of atomically thin gallium or indium layers dramatically affects Ge incorporation in GaN, with indium surfactant layer promoting Ge incorporation while gallium surfactant layer promotes segregation of Ge to the surface. Understanding the role of surfactants is crucial for controlling GaN doping and achieving high n-type doping levels using Ge.
Article
Crystallography
Di Di Li, Xu Jun Su, Jing Jing Chen, Lu Hua Wang, Jun Huang, Mu Tong Niu, Xiaodan Wang, Xionghui Zeng, Ke Xu
Summary: This study investigates the surface morphology and microstructure of c-plane AlN thick films grown by HVPE. The effects of miscut angle of sapphire substrates and HCl gas flow on the surface morphology are analyzed. It is found that AlN films grown on substrate with 4 degrees miscut have lower dislocation density.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Moe Shimokawa, Shohei Teramura, Shunya Tanaka, Tomoya Omori, Kazuki Yamada, Yuya Ogino, Ayumu Yabutani, Sho Iwayama, Kosuke Sato, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hideto Miyake
Summary: In the growth of Al0.6Ga0.4N, the formation of loop dislocations during three-dimensional growth reduces the dislocation density effectively. The study found that the spontaneous nucleation behavior of Al0.6Ga0.4N strongly depends on the fabrication temperature of homo-AlN, leading to successful reduction of dislocation density to as low as 5.8 x 10(8) cm(-2).
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Tomasz Sochacki, Slawomir Sakowski, Pawel Kempisty, Mikolaj Amilusik, Piotr Jaroszynski, Malgorzata Iwinska, Michal Bockowski
Summary: Different configurations of the growth zone were explored for the crystallization of HVPE-GaN in order to suppress lateral growth along the edges. Placing molybdenum elements near the growing crystal proved effective in reducing the area of material deposition at the edges, as confirmed by Computational Fluid Dynamics simulations. This solution was found to result in lower supersaturation values near the crystal edges where the molybdenum elements were placed.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
Lin Zhang, Zeren Wang, Jiejun Wu, Tong Han, Fang Liu, Xingyu Zhu, Tongjun Yu
Summary: In this study, high quality semi-polar GaN layers were fabricated on m-plane sapphire templates using vertical hydride vapor phase epitaxy system. The in-plane epitaxial relationships between GaN and sapphire substrate were determined, and the crystalline anisotropies were shown to be associated with crystal quality and surface defects.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Crystallography
Tsuguo Fukuda, Yuji Shiraishi, Toki Nanto, Takashi Fujii, Kazumasa Sugiyama, Rayko Simura, Hiroyuki Iechi, Kazuyuki Tadatomo
Summary: The successful growth of high-quality ScAlMgO4 crystal boules and epitaxial GaN films on the template has been demonstrated. The high cleavability of ScAlMgO4 substrate allows for reuse and cost-saving in GaN film fabrication. The growth method presents a promising way to obtain GaN free-standing wafers and reduce production costs effectively.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Energy & Fuels
Jacob T. Boyer, Kevin L. Schulte, Matthew R. Young, Aaron J. Ptak, John Simon
Summary: This study reports the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE). The device performance of AlInP-passivated solar cells was compared with control cells passivated with GaInP. The addition of AlInP passivation improved the current collection and the open-circuit voltage of the solar cells. It is expected that with further optimization, the hydride vapor-phase epitaxy (HVPE)-grown device efficiencies will reach parity with state-of-the-art devices grown by other epitaxial methods.
PROGRESS IN PHOTOVOLTAICS
(2023)
Article
Crystallography
Vineeta R. Muthuraj, Wenjian Liu, Henry Collins, Weiyi Li, Robert Hamwey, Steven P. DenBaars, Umesh K. Mishra, Stacia Keller
Summary: The electrical properties of InN make it a promising candidate for III-nitride electronic devices. One-dimensional InN quantum wire-like structures were grown on miscut substrates using N-polar MOCVD growth to mitigate the high lattice mismatch with GaN. The optimal growth conditions for quantum wire segment formation were determined by varying the InN growth temperature, thickness, and NH3 flow during growth. Anisotropic electrical conduction was observed in the N-polar InN wire-like samples.
Article
Crystallography
Marketa Zikova, Alice Hospodkova, Jiri Pangrac, Jiri Oswald, Pavel Krcil, Eduard Hulicius, Philomela Komninou, Joseph Kioseoglou
JOURNAL OF CRYSTAL GROWTH
(2015)
Article
Crystallography
Alice Hospodkova, Jiri Pangrac, Jan Vyskocil, Marketa Zikova, Jiri Oswald, Philomela Komninou, Eduard Hulicius
JOURNAL OF CRYSTAL GROWTH
(2015)
Article
Nanoscience & Nanotechnology
Maya P. Mikhailova, Anatoly I. Veinger, Igor V. Kochman, Petr V. Semenikhin, Karina V. Kalinina, Robert V. Parfeniev, Vyacheslav A. Berezovets, Mikhail O. Safonchik, Alice Hospodkova, Jiri Pangrac, Marketa Zikova, Eduard Hulicius
JOURNAL OF NANOPHOTONICS
(2016)
Article
Physics, Condensed Matter
A. Hospodkova, J. Oswald, J. Pangrac, K. Kuldova, M. Zikova, J. Vyskocil, E. Hulicius
PHYSICA B-CONDENSED MATTER
(2016)
Article
Crystallography
A. Hospodkova, E. Hulicius, J. Pangrac, F. Dominec, M. P. Mikhailova, A. I. Veinger, I. V. Kochman
JOURNAL OF CRYSTAL GROWTH
(2017)
Article
Crystallography
Marketa Zikova, Alice Hospodkova, Jiri Pangrac, Jiri Oswald, Eduard Hulicius
JOURNAL OF CRYSTAL GROWTH
(2017)
Article
Physics, Condensed Matter
M. P. Mikhailova, V. A. Berezovets, R. V. Parfeniev, L. V. Danilov, M. O. Safonchik, A. Hospodkova, J. Pangrac, E. Hulicius
Article
Chemistry, Physical
Alice Hospodkova, Jiri Pangrac, Marketa Zikova, Jiri Oswald, Jan Vyskocil, Philomela Komninou, Joseph Kioseoglou, Nikoleta Florini, Eduard Hulicius
APPLIED SURFACE SCIENCE
(2014)
Article
Crystallography
Filip Dominec, Alice Hospodkova, Tomas Hubacek, Marketa Zikova, Jiri Pangrac, Karla Kuldova, Aliaksei Vetushka, Eduard Hulicius
JOURNAL OF CRYSTAL GROWTH
(2019)
Proceedings Paper
Nanoscience & Nanotechnology
Eduard Hulicius, Karla Kuldova, Alice Hospodkova, Jiri Pangrac, Filip Dominec, Josef Humlicek, Ivan Pelant, Ondrej Cibulka, Katerina Herynkova
10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2018 (R))
(2019)
Article
Chemistry, Multidisciplinary
Tomas Hubacek, Alice Hospodkova, Karla Kuldova, Jiri Oswald, Jiri Pangrac, Vitezslav Jary, Filip Dominec, Marketa Slavicka Zikova, Frantisek Hajek, Eduard Hulicius, Alexej Vetushka, Gilles Ledoux, Christophe Dujardin, Martin Nikl
Proceedings Paper
Engineering, Electrical & Electronic
Alice Hospodkova, Jiri Pangrac, Karla Kuldova, Martin Nikl, Oliva Pacherova, Jiri Oswald, Tomas Hubacek, Marketa Zikova, Petr Bruza, Dalibor Panek, Karel Blazek, Gilles Ledoux, Christophe Dujardin, Michael Heuken, Eduard Hulicius
FOURTH CONFERENCE ON SENSORS, MEMS, AND ELECTRO-OPTIC SYSTEMS
(2017)
Proceedings Paper
Engineering, Electrical & Electronic
Maya P. Mikhaliova, Anatoly I. Veinger, Igor V. Kochman, Petr V. Semenikhin, Karina V. Kalinina, Robert V. Parfeniev, Vyacheslav A. Berezovets, Alice Hospodkova, Jiri Pangrac, Eduard Hulicius
QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIII
(2016)
Article
Engineering, Electrical & Electronic
Zdenek Chobola, Miroslav Lunak, Jiri Vanek, Eduard Hulicius, Ivo Kusak
JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS
(2015)
Proceedings Paper
Instruments & Instrumentation
Maya Mikhailova, Edward Ivanov, Leonid Danilov, Andrei Petukhov, Karina Kalinina, Nikolai Stoyanov, Yuri Yakovlev, Alice Hospodkova, Jiri Pangrac, Jiri Oswald, Marketa Zikova, Eduard Hulicius
PHOTONICS, DEVICES, AND SYSTEMS VI
(2015)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)