Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 23-24, Pages 4685-4691Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.07.045
Keywords
Nucleation; Defects; Hydride vapor phase epitaxy; Nitrides; Semiconducting gallium compounds
Funding
- Netherlands Organization for Scientific Research (STW-NWO)
Ask authors/readers for more resources
The nucleation of HVPE GaN on misoriented sapphire substrates and the transition from the nucleation layer to an epitaxial film were investigated. After a KOH/NaOH eutectic etch of the approximately 45 mu m thick GaN layer, grown on sapphire using a low temperature nucleation, high temperature epitaxy process, the cross-sections revealed columnar structures, up to roughly 1 mu m above the sapphire substrate. Photoetching of the thick GaN layers revealed inhomogeneous defect distributions along the cross-sections, which appeared to be related to the numerous pinholes originating at the GaN/sapphire interface. We present a model explaining the formation of pinholes by the coalescence of the GaN nuclei during the epitaxial overgrowth. (C) 2009 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available