Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 8, Pages 2341-2344Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.01.128
Keywords
Electrical properties; P-type conduction; ZnO; X-ray photoelectron spectroscopy
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The chemical state of nitrogen, aluminum, oxygen and zinc in Al-N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N-1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al-N-O-H species, and the lower one perhaps derive from the (NH2)(-) cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al-2p3/2 photoelectron peaks revealed an Al-N bonding state, a key factor to the co-doping method. (C) 2008 Elsevier B.V. All rights reserved.
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