Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 7, Pages 1994-1996Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.11.007
Keywords
RHEED; XPS; Molecular beam epitaxy; Nitrides
Funding
- Ministry of Education, Culture, Sports, Science and Technology [18560344]
- Grants-in-Aid for Scientific Research [18560344] Funding Source: KAKEN
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The GaN layers were grown by compound-source molecular beam epitaxy (CS-MBE) on (1 1 1) aluminum (Al) substrates with and without mitriclation. The melting point of Al substrates limits the growth temperature. The layers were grown at 650 degrees C. Reflection high-energy electron diffraction (RHEED) patterns of the layers indicate that the mitriclation is effective for GaN growth by CS-MBE on aluminum substrates. Photoluminescence was observed from the layer grown on the Al substrate with nitridation at RT. (C) 2008 Elsevier B.V. All rights reserved.
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