Molecular beam epitaxy of highly antimony doped germanium on silicon

Published 2008 View Full Article

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Title
Molecular beam epitaxy of highly antimony doped germanium on silicon
Authors
Keywords
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Journal
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 21, Pages 4531-4534
Publisher
Elsevier BV
Online
2008-08-20
DOI
10.1016/j.jcrysgro.2008.08.018

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