Journal
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
Volume 11, Issue 6, Pages 1458-1464Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jctn.2014.3518
Keywords
Fracture; Mechanical Properties; Molecular Dynamics Simulations; Two-Dimensional Materials
Categories
Funding
- Vietnam National Foundation for Science and Technology Development (NAFOSTED) [107.02-2011.10]
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Molecular dynamics simulations were carried out to investigate the tensile mechanical behavior of hexagonal aluminum nitride (AlN), boron nitride (BN), gallium nitride (GaN), indium nitride (InN), and silicon carbide (SiC) monolayer sheets. The Tersoff and Tersoff-like potentials are used to model the interatomic interaction. Every sheet contains 4032 atoms. Stress-strain curves are established in the armchair and zigzag directions for uniaxial tensile response. Compared to graphene, hexagonal BN, SiC, AlN, InN, and GaN monolayer sheets exhibit approximately 77%, 53%, 41%, 27%, and 25% in Young's modulus; and 86%, 49%, 36%, 22% and 26% in fracture stress in the zigzag direction, respectively. Fracture strains appear about 19.5-22.8% and 15.5-17.7% in the zigzag and armchair directions, respectively. It is found that fracture stress-Young's modulus ratios of these 5 sheets and graphene are fairly different.
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