Journal
JOURNAL OF COLLOID AND INTERFACE SCIENCE
Volume 408, Issue -, Pages 59-65Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2013.06.069
Keywords
Quantum dot CuInS2; Barrier layer; Bithiazole dye; Solar cells; High open-circuit voltage
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Funding
- NSFC/China [2116110444, 21172073, 91233207]
- National Basic Research 973 Program [2013CB733700]
- Fundamental Research Funds for the Central Universities [WJ0913001]
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In this work, the quantum dot CuInS2 layer was deposited on TiO2 film using successive ionic layer absorption and reaction (SILAR) method, and then two bithiazole-bridged dyes (BTF and BIB) were sensitized on the CuInS2/TiO2 films to form dye/CuInS2/TiO2 photoanodes for DSSCs. It was found that the quantum dots CuInS2 as an energy barrier layer not only could effectively improve open-circuit voltage (V-oc) of solar cell, but also increase short-circuit photocurrent (J(sc)) compared to the large decrease in.'s,. of ZnO as energy barrier layer. The electrochemical impedance spectroscopy (EIS) measurement showed that the CuInS2 formed a barrier layer to suppress the recombination from injection electron to the electrolyte and improve open-circuit voltage. Finally, the open-circuit voltage increased about 22 and 27 mV for BTF and BTB-/CuInS2/TiO2-based cells, the overall conversion efficiencies also reached to 7.20% and 6.74%, respectively. (C) 2013 Elsevier Inc. All rights reserved.
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