Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates

Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes

(2013) B. Romanczyk et al.   APPLIED PHYSICS LETTERS

Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III–V solar cell applications

(2013) I. Garcia et al.   JOURNAL OF CRYSTAL GROWTH

Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers

(2013) Ryan M. France et al.   IEEE Journal of Photovoltaics

Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells

(2012) R. M. France et al.   JOURNAL OF APPLIED PHYSICS

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

(2012) I García et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C

(2009) O. Ostinelli et al.   JOURNAL OF CRYSTAL GROWTH

High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures

(2009) M. Stan et al.   JOURNAL OF CRYSTAL GROWTH

MOVPE growth of antimonide-containing alloy materials for long wavelength applications

(2008) T.F. Kuech et al.   JOURNAL OF CRYSTAL GROWTH