Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN

(2013) Michael A. Reshchikov et al.   PHYSICAL REVIEW B

Tunable thermal quenching of photoluminescence in Mg-dopedp-type GaN

(2013) M. A. Reshchikov et al.   PHYSICAL REVIEW B

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

(2012) M. A. Reshchikov et al.   JOURNAL OF APPLIED PHYSICS

Two-step thermal quenching of photoluminescence in Zn-doped GaN

(2012) Michael A. Reshchikov   PHYSICAL REVIEW B

Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures

(2011) Haiping He et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN

(2011) Michael A. Reshchikov et al.   PHYSICAL REVIEW B

Strong violet luminescence from ZnO nanocrystals grown by the low-temperature chemical solution deposition

(2009) S.S. Kurbanov et al.   JOURNAL OF LUMINESCENCE

About the Cu-related green luminescence band in ZnO

(2009) Michael A. Reshchikov et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Evidence for Two Mg Related Acceptors in GaN

(2009) B. Monemar et al.   PHYSICAL REVIEW LETTERS

Origins of band-gap renormalization in degenerately doped semiconductors

(2008) Aron Walsh et al.   PHYSICAL REVIEW B