Minority carrier diffusion length extraction in Cu2ZnSn(Se,S)4 solar cells
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Title
Minority carrier diffusion length extraction in Cu2ZnSn(Se,S)4 solar cells
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 11, Pages 114511
Publisher
AIP Publishing
Online
2013-09-21
DOI
10.1063/1.4821841
References
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Related references
Note: Only part of the references are listed.- Band tailing and efficiency limitation in kesterite solar cells
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- (2010) Gregory Brown et al. APPLIED PHYSICS LETTERS
- Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4
- (2010) Clas Persson JOURNAL OF APPLIED PHYSICS
- Interpretation of admittance, capacitance-voltage, and current-voltage signatures in Cu(In,Ga)Se2 thin film solar cells
- (2010) Tobias Eisenbarth et al. JOURNAL OF APPLIED PHYSICS
- Intrinsic point defects and complexes in the quaternary kesterite semiconductorCu2ZnSnS4
- (2010) Shiyou Chen et al. PHYSICAL REVIEW B
- Internal quantum efficiency analysis of solar cell by genetic algorithm
- (2010) Kanglin Xiong et al. SOLAR ENERGY
- Recombination kinetics and stability in polycrystalline Cu(In,Ga)Se2 solar cells
- (2008) W.K. Metzger et al. THIN SOLID FILMS
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