Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector

Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD

(2013) Guoqing Miao et al.   CRYSTENGCOMM

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

(2012) Jian-Guang Chang et al.   CHINESE PHYSICS LETTERS

High indium content InGaAs photodetector: with InGaAs or InAlAs graded buffer layers

(2012) Yi GU et al.   JOURNAL OF INFRARED AND MILLIMETER WAVES

Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

(2011) Michael MacDougal   OPTICAL ENGINEERING

Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

(2010) Weida Hu et al.   JOURNAL OF ELECTRONIC MATERIALS

Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors

(2009) W. D. Hu et al.   JOURNAL OF APPLIED PHYSICS

Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode

(2009) X. D. Wang et al.   OPTICAL AND QUANTUM ELECTRONICS

Gas Source MBE-Grown Metamorphic InGaAs Photodetectors using InAlAs Buffer and Cap Layers with Cut-off Wavelength up to 2.7 μm

(2008) Tian Zhao-Bing et al.   CHINESE PHYSICS LETTERS

Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer

(2008) Yong-Gang Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY