Article
Materials Science, Multidisciplinary
Juan Jiang, Alex Taekyung Lee, Sangjae Lee, Claudia Lau, Min Li, Tor M. Pedersen, Chong Liu, Sergey Gorovikov, Sergey Zhdanovich, Andrea Damascelli, Ke Zou, Frederick J. Walker, Sohrab Ismail-Beigi, Charles H. Ahn
Summary: This study investigates the synthesis and electronic properties of epitaxial perovskite La1-xSrxRhO3 thin films, revealing the effect of Sr doping on the electronic phase diagram. Experimental data show an insulator-metal-insulator transition caused by Sr addition, which is explained by theoretical calculations.
Article
Materials Science, Multidisciplinary
Lei Cao, Andreas Herklotz, Diana Rata, Chenyang Yin, Oleg Petracic, Ulrich Kentsch, Manfred Helm, Shengqiang Zhou
Summary: The efficient control of vacancy profiles in epitaxial La0.7Sr0.3MnO3-delta thin films through helium implantation leads to significant changes in physical properties, transitioning from ferromagnetic metallic to antiferromagnetic insulating, with a substantial increase in resistivity by four orders of magnitude at room temperature. This result offers an attractive means for tuning the emergent physical properties of oxide thin films through a strong coupling between strain, defects, and valence.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Jongmin Lee, Gi-Yeop Kim, Seyeop Jeong, Mihyun Yang, Jong-Woo Kim, Byeong-Gwan Cho, Yongseong Choi, Sangmo Kim, Jin San Choi, Tae Kwon Lee, Jiwoong Kim, Dong Ryeol Lee, Seo Hyoung Chang, Sungkyun Park, Jong Hoon Jung, Chung Wung Bark, Tae-Young Koo, Philip J. Ryan, Kyuwook Ihm, Sanghoon Kim, Si-Young Choi, Tae Heon Kim, Sanghan Lee
Summary: In this work, the transport properties in metal-to-insulator transitions of perovskite nickelates were shown to be tunable via epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. The structural engineering of the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films enabled an exotic phase that is unattainable in the parent compound. Modification of the NdNiO3 template layer thickness provided an additional knob for tailoring the linked transport characteristics.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Marco Caputo, Zoran Ristic, Rajendra S. Dhaka, Tanmoy Das, Zhiming Wang, Christan E. Matt, Nicholas C. Plumb, Eduardo B. Guedes, Jasmin Jandke, Muntaser Naamneh, Anna Zakharova, Marisa Medarde, Ming Shi, Luc Patthey, Joel Mesot, Cinthia Piamonteze, Milan Radovic
Summary: The magnetic and electronic properties of ultrathin NdNiO3 (NNO) film near a ferromagnetic La0.67Sr0.33MnO3 (LSMO) layer were investigated using experimental and theoretical methods. Direct magnetic coupling between the nickelate film and the manganite layer was observed, leading to an unusual ferromagnetic phase in NNO. It was also found that the metal-insulator transition in the NNO layer was suppressed near the ferromagnetic layer.
Article
Engineering, Electrical & Electronic
Umar Sidik, Azusa N. Hattori, Ken Hattori, Musa Alaydrus, Ikutaro Hamada, Liliany N. Pamasi, Hidekazu Tanaka
Summary: Researchers demonstrate tunable proton diffusion within perovskite lattice by regulating structural strain and reveal the significant role of strain in controlling proton diffusion in the RNiO3 system.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Federico Mazzola, Sandeep Kumar Chaluvadi, Vincent Polewczyk, Debashis Mondal, Jun Fujii, Piu Rajak, Mahabul Islam, Regina Ciancio, Luisa Barba, Michele Fabrizio, Giorgio Rossi, Pasquale Orgiani, Ivana Vobornik
Summary: This study demonstrates a genuine Mott transition without any symmetry breaking side effects in thin films of V2O3 using material synthesis and photoelectron spectroscopy. The spectral signal evolves slowly over a wide temperature range approaching the metal-insulator transition, with the Fermi wave-vector remaining unchanged and a lower critical temperature than that reported for the bulk.
Article
Materials Science, Multidisciplinary
E. Yadav, K. Soni, S. Harisankar, S. Prabhu, K. R. Mavani
Summary: The variation of epitaxial strain in thin films through thickness modification influences the structural and transport properties in low dimensional mott materials. The strain tends to partially relax with increasing thickness, causing a substantial softening of the Raman modes. Raman spectroscopy and parameters are used to estimate thermal conductivity, and a model is applied to understand anharmonic contributions in the system.
Article
Chemistry, Multidisciplinary
Eti Barazani, Dip Das, Chubin Huang, Abhishek Rakshit, Cecile Saguy, Pavel Salev, Javier del Valle, Maytal Caspary Toroker, Ivan K. K. Schuller, Yoav Kalcheim
Summary: The effects of strain on the metal-insulator phase transitions in V2O3 are explored. It is found that the expansion of the ab-plane is crucial for inducing negative pressure effects in the films. The findings provide insights into manipulating a Mott transition in V2O3 and expanding its potential applications in electronics.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Yuta Arata, Hiroyuki Nishinaka, Minoru Takeda, Kazutaka Kanegae, Masahiro Yoshimoto
Summary: This study reveals that the resistive switching temperature of epitaxial VO2 thin films is modulated by bending stress, depending on the presence or absence of a SnO2 buffer layer.
Article
Materials Science, Multidisciplinary
Yongchang Ma, Rui Chen, Yajun Li, Cuimin Lu, Chenguang Zhang
Summary: We propose a model to estimate the energy barrier responsible for the hysteresis of the thermally driven Mott phase transition and validate the model with experimental data. For heating, the resistance in VO2 films exhibits step-like changes, forming multiple nonvolatile states, while no significant changes occur during cooling. The memory ability is attributed to the structure of the metal and insulator domains.
Article
Materials Science, Multidisciplinary
Jae-Hyun Ha, Hyung-Wook Kim, Young-Sik Jo, Seog-Whan Kim, Jung-Il Hong
Summary: The electrical properties of V2O3 are highly sensitive to crystallographic structures, residual strains, and lattice strain, which can be controlled to tune the metal-insulator transition characteristics. The effect of atomic distances on electron band gap plays a key role in understanding the observed changes.
APPLIED MATERIALS TODAY
(2021)
Article
Physics, Multidisciplinary
Yueying Li, Xiangbin Cai, Wenjie Sun, Jiangfeng Yang, Wei Guo, Zhengbin Gu, Ye Zhu, Yuefeng Nie
Summary: Nickel-based superconductivity offers a new platform for studying high-Tc superconductivity. The crystalline quality of the perovskite phase is crucial in synthesizing high-quality superconducting nickelates. By using reactive molecular beam epitaxy, we demonstrate that atomic-scale engineering of the interface structure can effectively reduce crystalline defects in Nd-based nickelate/SrTiO3 heterostructures.
CHINESE PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Lulu Wang, Zewei Shao, Qiang Li, Jianjun Liu, Chang Yang, Ping Jin, Xun Cao
Summary: This research investigates the relationship between phase-transition temperature and external strains in high-quality epitaxial films of vanadium dioxide (VO2) grown on fluorophlogopite substrates. The results show that external strains significantly affect the phase-transition properties of VO2, providing important insights for strain engineering in phase-transition materials.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Chemistry, Physical
Jingxin Sang, Tan Zheng, Liu Xu, Xin Zhou, Shijian Tian, Jiatong Sun, Xiaofeng Xu, Jianqiang Wang, Shuguang Zhao, Yang Liu
Summary: This study discusses the effects of surface topology change on metal-insulator transition behaviors of VO2/Al2O3 thin films prepared by DC sputtering. It is found that grain size and lattice strain play significant roles in improving the metal-insulator transition, with increasing crystalline size enhancing sheet conductivity and lattice strain modulating T-MIT.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Shenli Zhang, I-Ting Chiu, Min-Han Lee, Brandon Gunn, Mingzhen Feng, Tae Joon Park, Padraic Shafer, Alpha T. N'Diaye, Fanny Rodolakis, Shriram Ramanathan, Alex Frano, Ivan K. Schuller, Yayoi Takamura, Giulia Galli
Summary: The oxygen vacancy concentration in cobaltites can be determined by the change in O K-edge XA spectra peak positions. The variation of Co-O bond length and Co-O-Co bond angle is also correlated with the presence of oxygen vacancies. The resistivity of the oxide material can be modified by adjusting the defect concentration, without any structural transformation.
CHEMISTRY OF MATERIALS
(2022)
Article
Physics, Applied
Lizhi Hu, Hanzhou Wu, Qianshi Zhang, Haoran You, Jie Jiao, Haosu Luo, Yaojin Wang, Anran Gao, Chungang Duan
Summary: Driven by the growth in the Internet of Things, there is a surge in demand for low-powered or self-powered sensors and devices. A fully self-powered magnetic sensor system based on the magnetoelectric effect is reported, with high sensitivity and power generation, suggesting potential applications in sustainable intelligent sensor networks.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Ru-Ru Ma, Dong-Doug Xu, Qi-Lan Zhong, Chao-Rong Zhong, Rong Huang, Ping-Hua Xiang, Ni Zhong, Chun-Gang Duan
Summary: This study demonstrates the diffusion kinetics of Cu ions in layered CuCrP2S6 and the coupling between Cu-ion concentration and crystal lattice via a tip-enhanced electric field based on scanning probe microscopy. Direct evidence of the coupling and resulting structural transitions was probed by utilizing spatially resolved Raman spectra, cross-section energy dispersion spectrum (EDS), and high-resolution transmission electron microscopy (HR-TEM). This knowledge enhances understanding of intrinsic Cu-ion migration effects on structure transformation and provides insights for nanoscale iontronics device mechanisms.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Physics, Condensed Matter
Jun-Ding Zheng, Yi-Feng Zhao, He Hu, Yu-Hao Shen, Yi-Fan Tan, Wen-Yi Tong, Ping-Hua Xiang, Ni Zhong, Fang-Yu Yue, Chun-Gang Duan
Summary: In this paper, the electronic properties of ferroelectric CuInP2S6 (CIPS) monolayer are studied, revealing its potential as a valleytronics material. The Rashba and Dresselhaus effects induce in-plane helical and nonhelical pseudospin textures, respectively. The chirality of the helical pseudospin texture is coupled to the out-of-plane ferroelectric polarization. Additionally, a large spin splitting due to spin-orbit coupling is observed at the K valley, which can be seen as the Zeeman effect under a valley-dependent pseudomagnetic field.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2022)
Article
Physics, Condensed Matter
Xu Niu, Bin-Bin Chen, Ni Zhong, Ping-Hua Xiang, Chun-Gang Duan
Summary: Transition metal oxides possess unique properties such as topological Hall effects and magnetic skyrmions. In this review, we discuss recent observations of THE and skyrmions in SrRuO3 films and interfaces with various materials, with a focus on the electric tuning of THE.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2022)
Article
Chemistry, Multidisciplinary
Zhao Guan, Yun-Kangqi Li, Yi-Feng Zhao, Yue Peng, Genquan Han, Ni Zhong, Ping-Hua Xiang, Jun-Hao Chu, Chun-Gang Duan
Summary: The study demonstrates the formation of out-of-plane domains in Hf0.5Zr0.5O2 (HZO) ferroelectric films through mechanical writing, enabling wider flexoelectric applications and ultrahigh-density storage.
Article
Physics, Applied
Wei Mao, Xing Deng, Feng-Rui Sui, Ya-Ting Xu, Rui-Juan Qi, Bin-Bin Chen, Ping-Hua Xiang, Ni Zhong
Summary: Researchers have successfully prepared a continuous vanadium diselenide thin film on mica and confirmed its van der Waals epitaxial structure. This free-standing and flexible film, combined with integrated circuit technology, is of great significance for the application of multifunctional flexible electronic devices.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Computer Science, Information Systems
Yiming Ren, Bobo Tian, Mengge Yan, Guangdi Feng, Bin Gao, Fangyu Yue, Hui Peng, Xiaodong Tang, Qiuxiang Zhu, Junhao Chu, Chungang Duan
Summary: Researchers have developed a circuit composed of a three-terminal memristor network to artificially replicate the associative intelligence of the biological brain. This network has the ability to recall multiple digit images and improve recognition rates for fragmentary images, providing a new approach for applications such as object recognition.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Quantum Science & Technology
Wen Xu, Jun-Ding Zheng, Wen-Yi Tong, Jiu-Long Wang, Ya-Ping Shao, Yu-Ke Zhang, Yi-Fan Tan, Chun-Gang Duan
Summary: Recently, researchers have successfully obtained a ferroelectric phase in monolayer black phosphorus through strain engineering, driven by the Jahn-Teller effect. Additionally, they found that the bandgap of monolayer black phosphorus can be tuned with applied strain, even achieving metal polarization states. This study not only provides a new avenue for exploring elemental ferroelectricity in 2D materials, but also highlights the power of strain engineering in related research.
ADVANCED QUANTUM TECHNOLOGIES
(2023)
Article
Chemistry, Physical
Guangjian Wu, Xumeng Zhang, Guangdi Feng, Jingli Wang, Keji Zhou, Jinhua Zeng, Danian Dong, Fangduo Zhu, Chenkai Yang, Xiaoming Zhao, Danni Gong, Mengru Zhang, Bobo Tian, Chungang Duan, Qi Liu, Jianlu Wang, Junhao Chu, Ming Liu
Summary: This study demonstrates an in-memory sensing and computing architecture using ferroelectric-defined reconfigurable two-dimensional photodiode arrays. High-level cognitive computing is achieved through the multiplication of light power and photoresponsivity using the photocurrent generation process and Kirchhoff's law. The weight is stored and programmed locally by the ferroelectric domains, allowing for multiple distinguishable weight states. This architecture enables image recognition without the need for external memory and computing units, paving the way for low-energy, low-latency, and reduced hardware overhead computing.
Article
Materials Science, Multidisciplinary
Pengfei Zhao, Xiyuan Peng, Mingqing Cui, Yanting Li, Chunli Jiang, Chunhua Luo, Bobo Tian, Hechun Lin, Hui Peng, Chun-Gang Duan
Summary: In this study, an optoelectronic synaptic device based on an organic semiconductor is fabricated to emulate the functions of biological synapses. The device demonstrates learning and logic functions through light stimuli and exhibits good synaptic performance and bending stability. Additionally, high-precision recognition of handwritten digits is achieved. This work showcases the potential of organic materials for neural computing networks.
ACS APPLIED POLYMER MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Zhen Song, You-Shan Zhang, Jing-Yi Shen, Bing Lin, Jie Wu, Ping-Hua Xiang, Chun-Gang Duan, Rui-Hua He
Summary: Perovskite iridates have the potential to host unconventional superconductivity, but Sr2IrO4 thin-film field-effect transistors show a remarkably robust insulating state. This insulating state can be controlled by thermal and oxygen annealing. The findings have important implications for further research on superconductivity in Sr2IrO4 thin films.
NPG ASIA MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Pengfei Zhao, Mingqing Cui, Yanting Li, Jie Lao, Chunli Jiang, Chunhua Luo, Bobo Tian, Hechun Lin, Hui Peng, Chun-Gang Duan
Summary: The optoelectronic synapse, as the basic unit of the artificial visual perception system, shows promise in terms of its high bandwidth, negligible crosstalk, and low-power dissipation. In this study, a self-powered optoelectronic synaptic device based on a 2D lead-free perovskite, Cs3Bi2Br9, was fabricated. The device exhibited typical synaptic behaviors and could mimic the characteristics of a nociceptor under self-biased conditions. This work provides an energy-efficient approach for constructing retinal-neuromorphic systems.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Yunzhe Zheng, Yuke Zhang, Tianjiao Xin, Yilin Xu, Shuangquan Qu, Junding Zheng, Zhaomeng Gao, Qilan Zhong, Yiwei Wang, Xiaoyu Feng, Yonghui Zheng, Yan Cheng, Ruiwen Shao, Fang Lin, Xiaoling Lin, He Tian, Rong Huang, Chungang Duan, Hangbing Lyu
Summary: This study used advanced electron microscopy techniques to investigate domain walls in Hf0.5Zr0.5O2 thin films. Different types of domain walls exhibited varying migration behaviors in response to the concentration of oxygen vacancies. Point defects and changes in the local strain field were found to drive domain wall switching in this material. These findings provide insights into the atomic-scale characteristics of domain walls and improve our understanding of the ferroelectric properties of Hf0.5Zr0.5O2 thin films.
MATERIALS TODAY NANO
(2023)
Article
Engineering, Electrical & Electronic
Yanting Li, Rongxue Ji, Pengfei Zhao, Jie Lao, Chunli Jiang, Bobo Tian, Chunhua Luo, Hechun Lin, Hui Peng, Chun-Gang Duan
Summary: In this work, a transparent optoelectronic synapse was fabricated using CuI as the electrode material, which showed a sensitive and linear response to light stimulation. The device successfully simulated basic functions of biological synapses and achieved basic arithmetic operations.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Yichen Cai, Jialong Zhang, Mengge Yan, Yizhou Jiang, Husnain Jawad, Bobo Tian, Wenchong Wang, Yiqiang Zhan, Yajie Qin, Shisheng Xiong, Chunxiao Cong, Zhi-Jun Qiu, Chungang Duan, Ran Liu, Laigui Hu
Summary: A two-terminal ferroelectric synaptic device was demonstrated using a molecular ferroelectric/semiconductor interface. The interfacial resistance can be tuned via polarization-controlled blocking effect, and exhibits typical synaptic features. The introduction of the semiconductor enables the attributes of optoelectronic synapse and in-sensor computing.
NPJ FLEXIBLE ELECTRONICS
(2022)
