Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4817424
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Funding
- DOE Division of Materials Science through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign [DEFG02-337 07ER46471]
- Center for Energy Nanoscience (CEN), an Energy Frontier Research Center (EFRC)
- U.S. Department of Energy, Office of Science and Office of Basic Energy Sciences [DESC0001013]
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We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization. (C) 2013 AIP Publishing LLC.
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