Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe

(2012) Raji Soundararajan et al.   JOURNAL OF APPLIED PHYSICS

Study of Different Cool Down Schemes During the Crystal Growth of Detector Grade CdZnTe

(2011) Santosh K. Swain et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Defect levels of semi-insulating CdMnTe:In crystals

(2011) K. H. Kim et al.   JOURNAL OF APPLIED PHYSICS

Size and distribution of Te inclusions in THM as-grown CZT wafers: The effect of the rate of crystal cooling

(2011) U.N. Roy et al.   JOURNAL OF CRYSTAL GROWTH

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

(2011) R. Gul et al.   JOURNAL OF ELECTRONIC MATERIALS

Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations

(2008) Mao-Hua Du et al.   JOURNAL OF APPLIED PHYSICS