Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 14, Pages 143703
Publisher
AIP Publishing
Online
2013-04-09
DOI
10.1063/1.4799126
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Band offsets and heterostructures of two-dimensional semiconductors
- (2013) Jun Kang et al. APPLIED PHYSICS LETTERS
- Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains
- (2012) Priya Johari et al. ACS Nano
- Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure
- (2012) C. Ataca et al. Journal of Physical Chemistry C
- Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties
- (2012) Hannu-Pekka Komsa et al. Journal of Physical Chemistry Letters
- Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
- (2012) Sefaattin Tongay et al. NANO LETTERS
- Valley polarization in MoS2 monolayers by optical pumping
- (2012) Hualing Zeng et al. Nature Nanotechnology
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
- (2012) Won Seok Yun et al. PHYSICAL REVIEW B
- Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
- (2012) Ashwin Ramasubramaniam PHYSICAL REVIEW B
- Valley-selective circular dichroism of monolayer molybdenum disulphide
- (2012) Ting Cao et al. Nature Communications
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Single-Layer MoS2 Phototransistors
- (2011) Zongyou Yin et al. ACS Nano
- Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication
- (2011) Zhiyuan Zeng et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers
- (2011) Yi Ding et al. PHYSICA B-CONDENSED MATTER
- Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
- (2011) J. N. Coleman et al. SCIENCE
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys
- (2008) Wan-Jian Yin et al. PHYSICAL REVIEW B
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started