Direct observation of the band gap shrinkage in amorphous In2O3–ZnO thin films

Relationship between variable range hopping transport and carrier density of amorphous In2O3–10 wt. % ZnO thin films

(2012) Kazumasa Makise et al.   JOURNAL OF APPLIED PHYSICS

Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature

(2012) Jian Sun et al.   JOURNAL OF APPLIED PHYSICS

Surface Origin of High Conductivities in UndopedIn2O3Thin Films

(2012) S. Lany et al.   PHYSICAL REVIEW LETTERS

Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film

(2011) Ju-Won Jeon et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Conductivity in transparent oxide semiconductors

(2011) P D C King et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Direct observation of Al-doping-induced electronic states in the valence band and band gap of ZnO films

(2011) Mercedes Gabás et al.   PHYSICAL REVIEW B

Oxygen Close-Packed Structure in Amorphous Indium Zinc Oxide Thin Films

(2010) Tatsuya Eguchi et al.   INORGANIC CHEMISTRY

Experimental and density-functional study of the electronic structure ofIn4Sn3O12

(2010) D. H. O’Neil et al.   PHYSICAL REVIEW B

Electronic structure ofIn2O3and Sn-dopedIn2O3by hard x-ray photoemission spectroscopy

(2010) C. Körber et al.   PHYSICAL REVIEW B

Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation

(2010) Julia E. Medvedeva et al.   PHYSICAL REVIEW B

Large electron mass anisotropy in ad-electron-based transparent conducting oxide: Nb-doped anataseTiO2epitaxial films

(2009) Yasushi Hirose et al.   PHYSICAL REVIEW B

Intrinsicn-Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study ofIn2O3,SnO2, and ZnO

(2009) Péter Ágoston et al.   PHYSICAL REVIEW LETTERS

Electronic structural analysis of transparent In2O3–ZnO films by hard X-ray photoelectron spectroscopy

(2009) Tadao Shibuya et al.   THIN SOLID FILMS

The Remarkable Thermal Stability of Amorphous In-Zn-O Transparent Conductors

(2008) Matthew P. Taylor et al.   ADVANCED FUNCTIONAL MATERIALS

Electron-phonon scattering in amorphous In2O3–ZnO films

(2008) Makoto Funaki et al.   JOURNAL OF APPLIED PHYSICS

Origins of band-gap renormalization in degenerately doped semiconductors

(2008) Aron Walsh et al.   PHYSICAL REVIEW B

General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films

(2008) Andrew J. Leenheer et al.   PHYSICAL REVIEW B

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS