Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4833540
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Funding
- DOE, Office of Basic Energy Sciences [DE-AC36-08GO28308]
- Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF) [DEAC05-06OR23100]
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AlxIn1-xP semiconductor alloys grown by metalorganic chemical vapor deposition on InGaAs graded buffer layers with varied aluminum compositions that span the transition from a direct to indirect semiconductor alloy are explored. The direct and indirect band gap transitions are observed in a single AlxIn1-xP sample with 40.8% allowing for a precise determination of the direct-indirect cross-over composition, x(c). The direct and indirect nature of observed luminescence peaks is verified using time-resolved photoluminescence. At low temperatures, x(c) is determined to be 40.5% at a corresponding direct band gap energy of 2.34 eV. (C) 2013 AIP Publishing LLC.
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