A many-electron tight binding method for the analysis of quantum dot systems

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

(2011) R. Rahman et al.   PHYSICAL REVIEW B

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

(2010) L. A. Tracy et al.   APPLIED PHYSICS LETTERS

Implications of simultaneous requirements for low-noise exchange gates in double quantum dots

(2010) Erik Nielsen et al.   PHYSICAL REVIEW B

Theory of valley-orbit coupling in a Si/SiGe quantum dot

(2010) Mark Friesen et al.   PHYSICAL REVIEW B

Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots

(2010) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation

(2010) Qiuzi Li et al.   PHYSICAL REVIEW B

Realizing singlet-triplet qubits in multivalley Si quantum dots

(2009) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Physical mechanisms of interface-mediated intervalley coupling in Si

(2009) A. L. Saraiva et al.   PHYSICAL REVIEW B

Magnetism and Correlations in Fractionally Filled Degenerate Shells of Graphene Quantum Dots

(2009) A. D. Güçlü et al.   PHYSICAL REVIEW LETTERS

Valley splitting in Si quantum dots embedded in SiGe

(2008) S. Srinivasan et al.   APPLIED PHYSICS LETTERS

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

(2008) M. Naumov et al.   Journal of Computational Electronics