Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy

Published 2012 View Full Article

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Title
Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 111, Issue 11, Pages 114516
Publisher
AIP Publishing
Online
2012-06-18
DOI
10.1063/1.4729045
References
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