4.6 Article

Structural and optical properties of ZnCdO/ZnO multiple quantum wells grown on sapphire substrates using pulsed laser deposition

Journal

JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 8, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4759325

Keywords

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Funding

  1. National Natural Science Foundation of China [51072181]
  2. Doctoral Fund of Ministry of Education of China [20090101110044]
  3. Science and Technology Department of Zhejiang Province [2010R50020]

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High quality Zn0.92Cd0.08O/ZnO multiple quantum wells with smooth interfaces have been prepared on c-plane sapphire substrates by pulsed laser deposition. The periodic structure has been characterized by scanning transmission electron microscope and energy dispersive x-ray spectroscopy line scans. The temperature dependent photoluminescence of Zn0.92Cd0.08O/ZnO exhibits an inconspicuous S-shaped property due to a combined effect of the slightly disordered ZnCdO alloy. We can observe both quantum confinement effects and quantum-confinement Stark effect in the quantum wells. We can modulate the well emission energy from 2.90 to 3.085 eV by varying the well thickness at room temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759325]

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