4.6 Article

Plasmonic terahertz detector response at high intensities

Journal

JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 1, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4732138

Keywords

-

Funding

  1. U.S. NSF under I/UCRC CONNECTION ONE
  2. NSF I-Corp
  3. NSF EAGER
  4. NPRP [NPRP 09-1211-2-475]
  5. Directorate For Engineering
  6. Div Of Industrial Innovation & Partnersh [1157515] Funding Source: National Science Foundation
  7. Div Of Electrical, Commun & Cyber Sys
  8. Directorate For Engineering [1106444] Funding Source: National Science Foundation
  9. Div Of Industrial Innovation & Partnersh
  10. Directorate For Engineering [1134723] Funding Source: National Science Foundation

Ask authors/readers for more resources

Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded detectors with high responsivity. Therefore, deviation from small signal mode of operation, when the detector signal is simply proportional to the THz intensity, must be considered. This work presents a new analytical model to predict terahertz response in a FET at arbitrary intensity levels. The proposed analytical model was experimentally validated using a 0.13 mu m InGaAs high electron mobility transistor and optically pumped CO2 gas laser operating at 1.63 THz of varying output intensities. The model is suitable for implementation in circuit simulators and might be used for device optimization and THz circuit design. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732138]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Materials Science, Multidisciplinary

Ballistic Injection Terahertz Plasma Instability in Graphene n+-i-n-n+ Field-Effect Transistors and Lateral Diodes

Victor Ryzhii, Maxim Ryzhii, Akira Satou, Vladimir Mitin, Michael S. Shur, Taiichi Otsuji

Summary: The injection of ballistic electrons can lead to terahertz radiation and be utilized for optimizing devices through effective Coulomb drag and plasma instability.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2022)

Review Nanoscience & Nanotechnology

Graphene-based plasmonic metamaterial for terahertz laser transistors

Taiichi Otsuji, Stephane Albon Boubanga-Tombet, Akira Satou, Deepika Yadav, Hirokazu Fukidome, Takayuki Watanabe, Tetsuya Suemitsu, Alexander A. Dubinov, Vyacheslav V. Popov, Wojciech Knap, Valentin Kachorovskii, Koichi Narahara, Maxim Ryzhii, Vladimir Mitin, Michael S. Shur, Victor Ryzhii

Summary: This paper reviews recent advancements in graphene-based plasmonic metamaterials for terahertz (THz) laser transistors. The researchers investigate various approaches using graphene plasmonic metamaterials to achieve room-temperature, dry-cell-battery operated intense THz lasing with fast direct modulation. The paper discusses device structures and design constraints for coherent light sources applicable to future THz wireless communication systems.

NANOPHOTONICS (2022)

Article Physics, Applied

Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

M. Ryzhii, V Ryzhii, T. Otsuji, V Mitin, M. S. Shur

Summary: The response of lateral n(+)-i-n-n(+) graphene field-effect transistors (GFETs) to terahertz (THz) radiation is analyzed in this study. The nonlinearity caused by Coulomb drag and plasmonic oscillations in the GFET channel enables a resonantly strong response, which can be used for effective resonant detection of THz radiation.

APPLIED PHYSICS LETTERS (2022)

Article Engineering, Biomedical

Revealing the complexity of ultra-soft hydrogel re-swelling inside the brain

Michael Shur, Outman Akouissi, Olivier Rizzo, Didier J. Colin, John M. Kolinski, Stephanie P. Lacour

Summary: The study proposes a simple fabrication and processing sequence to deliver brain-like hydrogel implants into the nervous tissue. Real-time monitoring of hydrogel re-swelling kinetics in vivo is achieved using microcomputed tomography, and the study reveals how implant geometry and mechanical interplay govern in vivo buckling. These findings provide important guidance for the engineering of biomimetic brain implants.

BIOMATERIALS (2023)

Article Physics, Applied

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Summary: We evaluated THz detectors based on graphene channel (GC) and a floating metal gate (MG) separated from GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs involves heating of the two-dimensional electron gas in GC by THz radiation, leading to thermionic emission of hot electrons from GC to MG. This results in variation of the floating gate potential, affecting the source-drain current. At THz radiation frequencies close to plasmonic resonance frequencies in the gated GC, the variation in source-drain current and detector responsivity can be resonantly large.

JOURNAL OF APPLIED PHYSICS (2023)

Article Materials Science, Multidisciplinary

Editors' Choice-Thin Film Transistor Response in the THz Range

M. S. Shur, X. Liu, T. Ytterdal

Summary: Novel metal oxide materials and improved fabrication processes have significantly enhanced the performance of thin film transistor (TFT), with approaches of 150 cm²/Vs in the effective field-effect mobility. An improved compact TFT model based on three models has been reported in this study, which considers the non-exponential slope in the subthreshold regime and the non-trivial capacitance dependence on gate bias. The TFTs have shown a substantial response to impinging THz and sub-THz radiation, and the detection sensitivity can be improved by using a complementary inverter and phase-matched THz signal feeding.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2023)

Review Physics, Applied

Effect of Electron Thermal Conductivity on Resonant Plasmonic Detection in Terahertz Hot-Electron Bolometers Based on Metal/Black-AsP/Graphene FETs

V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Summary: This article analyzes the operation of terahertz (THz) bolometric detectors based on field-effect transistor (FET) structures with graphene channels (GCs) and black-phosphorus and black-arsenic gate barrier layers (BLs). The detectors utilize the heating of a two-dimensional electron gas (2DEG) by THz radiation, leading to the emission of hot electrons into the gate via the BL. The excitation of plasmonic oscillations in the GC by THz signals results in a resonant detector response and increased responsivity.

PHYSICAL REVIEW APPLIED (2023)

Article Physics, Applied

Impact of fin aspect ratio on enhancement of external quantum efficiency in single AlGaN fin light-emitting diodes pixels

Babak Nikoobakht, Yuqin Zong, Okan Koksal, Amit Agrawal, Christopher Montgomery, Jaime Rumsey, Jacob Leach, Michael Shur

Summary: In this study, we investigate the impact of the fin aspect ratio on the external quantum efficiency (EQE) and UV emission of AlGaN fin/p-GaN heterojunctions. With decreasing aspect ratio, the UV emission of the fins increases and EQE is enhanced by 7 times. This can be attributed to the conservation of the volume of the carrier depletion region within a fin.

APPLIED PHYSICS LETTERS (2023)

Article Nanoscience & Nanotechnology

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, S. G. Kalenkov, V. Mitin, M. S. Shur

Summary: In this study, we investigate the response of the micromechanical field-effect transistors (MMFETs) to terahertz (THz) signals. The MMFET utilizes microcantilevers (MC) as a floating gate and the movable mirror of Michelson optical interferometer. The mechanical vibrations of MC are converted into optical signals, allowing MMFET to operate as a THz radiation detector. The combination of mechanical and plasmonic resonances in MMFET, along with optical amplification, enables effective THz detection.

AIP ADVANCES (2023)

Article Physics, Multidisciplinary

Resonant THz detection by periodic multi-gate plasmonic FETs

Yuhui Zhang, Michael Shur

Summary: We demonstrate that a periodic multi-grated-gate structure can be used in THz plasmonic FETs (TeraFETs) to enhance THz detection sensitivity. By introducing spatial non-uniformity through separated gate sections, regions with different carrier concentrations and velocities are created, resulting in harmonic behaviors. The frequency spectrum of the DC voltage response consists of enhanced and suppressed regions. In the enhanced region, the response voltage amplitude can be increased up to approximately 100% compared to a uniform channel device. The distribution pattern of these regions is directly related to the number of gate sections (N (s)). A mapping of response amplitude in an N (s)-frequency scale is created, which aids in distinguishing enhanced/suppressed regions and locating optimal operating parameters.

FRONTIERS IN PHYSICS (2023)

Proceedings Paper Engineering, Electrical & Electronic

Diamond-based plasmonic terahertz devices

Muhammad Mahmudul Hasan, Yuhiu Zhang, Nezih Pala, Michael Shur

Summary: p-diamond is a strong candidate for sub-THz and THz applications due to its favorable properties, such as large hole effective mass, high optical phonon energy, high momentum relaxation time, and high mobility. Recent research on p-diamond TeraFETs has shown their potential for sub-THz and THz radiation detection and transmission. N-diamond TeraFETs also hold promise for emerging terahertz applications. One of the main factors affecting plasma wave dampening in our study is the viscosity of the charge carrier medium in the channel.

2023 IEEE 16TH DALLAS CIRCUITS AND SYSTEMS CONFERENCE, DCAS (2023)

Article Materials Science, Multidisciplinary

Cyclotron and magnetoplasmon resonances in bilayer graphene ratchets

E. Monch, S. O. Potashin, K. Lindner, I. Yahniuk, L. E. Golub, V. Yu. Kachorovskii, V. V. Bel'kov, R. Huber, K. Watanabe, T. Taniguchi, J. Eroms, D. Weiss, S. D. Ganichev

Summary: We present a study on the conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene, tunable by magnetic field and gate voltage. We observe a sharp cyclotron resonance in the photocurrent and discover two effects caused by electron-electron interaction: the splitting of the resonance due to Coulomb coupling and the suppression of its second harmonic due to interparticle collisions. A theoretical model that fits the experimental data perfectly is developed, suggesting that the ratchet current is generated in the hydrodynamic regime of nonideal electron liquid.

PHYSICAL REVIEW B (2023)

Proceedings Paper Engineering, Biomedical

Biomedical Applications of Terahertz Technology

Michael Shur

Summary: Terahertz radiation is used for detection, sensing, and imaging of biological objects, especially in cancer diagnostics. This technology allows for more accurate cancer detection based on the magnitude and phase information of the THz signal.

ADVANCES IN TERAHERTZ BIOMEDICAL IMAGING AND SPECTROSCOPY (2022)

Proceedings Paper Engineering, Biomedical

Graphene-based plasma-wave devices for terahertz applications

Taiichi Otsuji, Victor Ryzhii, Michael Shur

Summary: This paper reviews the development of graphene plasmonic THz technology and suggests the potential for commercial applications. The unique properties of graphene and its ability to form heterostructures with other materials make it a promising candidate for revolutionizing THz technology.

ADVANCES IN TERAHERTZ BIOMEDICAL IMAGING AND SPECTROSCOPY (2022)

Proceedings Paper Engineering, Electrical & Electronic

Plasmonic Si CMOS TeraFETs for detection, mixing, and processing sub-THz radiation

Michael Shur, Xueqing Liu, Trond Ytterdal

Summary: Short channel Si CMOS is used in THz detectors and THz imaging arrays. The excitation of phase-shifted resonant or overdamped plasma waves enables the operation of TeraFETs as THz spectrometers. Future developments in Si CMOS sub-THz and THz applications will involve Si CMOS integrated circuits such as line-of-sight detectors, traveling wave sub-THz amplifiers, and frequency-to-digital converters.

TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS XV (2022)

No Data Available