Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers

Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline silicon

(2012) F. Werner et al.   JOURNAL OF APPLIED PHYSICS

The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon

(2012) Michael Kessler et al.   JOURNAL OF APPLIED PHYSICS

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS

Interpretation of recombination at c-Si/SiNx interfaces by surface damage

(2010) Silke Steingrube et al.   JOURNAL OF APPLIED PHYSICS

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology

(2008) Oliver Schultz et al.   PROGRESS IN PHOTOVOLTAICS