Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN
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Title
Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 5, Pages 053512
Publisher
AIP Publishing
Online
2012-09-07
DOI
10.1063/1.4749789
References
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Related references
Note: Only part of the references are listed.- Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
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- Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
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- Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
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- Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation
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- Crystal Phase Quantum Dots
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- Anisotropic charge transport in nonpolar GaN quantum wells: Polarization induced line charge and interface roughness scattering
- (2010) Aniruddha Konar et al. PHYSICAL REVIEW B
- Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
- (2010) Oliver Brandt et al. PHYSICAL REVIEW B
- Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN
- (2009) P. Corfdir et al. APPLIED PHYSICS LETTERS
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- Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
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- Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates
- (2009) P. Corfdir et al. JOURNAL OF APPLIED PHYSICS
- Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
- (2009) Kuranananda Pemasiri et al. NANO LETTERS
- Electron localization by a donor in the vicinity of a basal stacking fault in GaN
- (2009) P. Corfdir et al. PHYSICAL REVIEW B
- Stacking-Faults-Free Zinc Blende GaAs Nanowires
- (2008) Hadas Shtrikman et al. NANO LETTERS
- Twinning superlattices in indium phosphide nanowires
- (2008) Rienk E. Algra et al. NATURE
- Controlled polytypic and twin-plane superlattices in iii–v nanowires
- (2008) P. Caroff et al. Nature Nanotechnology
- Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
- (2008) Patrick Rinke et al. PHYSICAL REVIEW B
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