The study of conductance in magnetic tunnel junctions with a thin MgO barrier: The effect of Ar pressure on tunnel magnetoresistance and resistance area product

Tunnel Magnetoresistance above 170% and Resistance–Area Product of 1 Ω (µm)2Attained byIn situAnnealing of Ultra-Thin MgO Tunnel Barrier

(2011) Hiroki Maehara et al.   Applied Physics Express

Magnetoresistance Ratio and Resistance Area Design of CPP-MR Film for 2–5 $\hbox{Tb/in}^{2}$ Read Sensors

(2010) Masayuki Takagishi et al.   IEEE TRANSACTIONS ON MAGNETICS

Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier

(2010) Witold Skowroński et al.   JOURNAL OF APPLIED PHYSICS

Evaluation of barrier uniformity in magnetic tunnel junctions prepared using natural oxidation of thin Mg layers

(2010) Takayuki Seki et al.   JOURNAL OF APPLIED PHYSICS

Tailoring interlayer exchange coupling of ferromagnetic films across MgO with Fe nanoclusters

(2010) Jared J. I. Wong et al.   PHYSICAL REVIEW B

Effect of Buffer Layer Texture on the Crystallization of CoFeB and on the Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions

(2009) J. Cao et al.   IEEE TRANSACTIONS ON MAGNETICS

Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties

(2009) Il-Jae Shin et al.   IEEE TRANSACTIONS ON MAGNETICS

Influence of Diffused Boron Into MgO Barrier on Pinhole Creation in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

(2009) K. Komagaki et al.   IEEE TRANSACTIONS ON MAGNETICS

Spin-torque-induced switching and precession in fully epitaxial Fe/MgO/Fe magnetic tunnel junctions

(2009) Rie Matsumoto et al.   PHYSICAL REVIEW B