Temperature dependence of Auger recombination in highly injected crystalline silicon

The Auger lifetime in crystalline silicon has been measured under high injection conditions using an injection-and temperature-dependent photoconductance apparatus, across a temperature range from 243 to 473 K (-30 to 200 degrees C). The corresponding ambipolar Auger coefficient was found to have a value of 1.6 x 10(-30) cm(6)/s at 303 K (30 degrees C) at an injection level of 5 x 10(16) cm(-3). The Auger coefficient was found to decrease between 243 K and 303 K, and then remain approximately constant up to 473 K. An empirical parameterization of the measured ambipolar Auger coefficient is provided. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768900]