Article
Chemistry, Physical
Arvind Kumar, Narendra Singh, Davinder Kaur
Summary: The present study demonstrates the fabrication of an ITO/MnO2/ITO capacitor-based transparent ReRAM device. This device exhibits high transparency and stable bipolar resistive switching characteristics. It is found that the current in the low resistance state is governed by Ohmic conduction, while the high resistance state is dominated by trap-controlled space charge limited conduction mechanism. The resistive switching phenomenon in this device is attributed to the formation and rupture of conduction filament via electron trapping and de-trapping in oxygen vacancies. Reliability tests show good endurance and long retention for the MnO2-based device, making it a promising transparent electronic device for AI applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Kuan Yew Cheong, Ilias Ait Tayeb, Feng Zhao
Summary: This study systematically investigates the effects of incorporating C60 in polymannose-based resistive switching memory for the first time. The use of C60 improves the endurance, stability, and ON/OFF ratio of the devices.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Chemistry, Physical
Guangyu Wang, Hong Wang, Xuan Jin, Vikash Agrawal, Qingyu Xu
Summary: The resistive switching behavior of CsPbBr3 layer with different electrode materials and TiO2 layer conditions was studied in this paper. It was found that the Ni electrode had a larger ON/OFF ratio, and the TiO2 layer had little influence on the RS behavior. RS provides an effective method for defect control, and the influence on the photovoltaic effect was investigated.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Multidisciplinary
He-Chun Zhou, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang
Summary: This study successfully applied Bi4Ti3O12 (BIT) ferroelectric films to the RS layers of memristors, demonstrating repeatable and stable bipolar resistive switching (RS) characteristics closely related to oxygen vacancies.
Article
Materials Science, Ceramics
Kumar Kaushlendra, Pradeep Kumar, Diksha Arora, Bhanu Ranjan, Davinder Kaur
Summary: This article presents a Cu/MoS2/NiMnIn memory structure for flexible electronics, and investigates the resistive switching characteristics. Two different devices were fabricated, one without sulfur vacancies and one with sulfur vacancies in the MoS2 thin film. The memory structure showed stable resistive switching behavior, good endurance cycles and data retention capability. Furthermore, the external temperature and magnetic field were found to affect the SET voltage and enhance the data storage capability of the device.
CERAMICS INTERNATIONAL
(2023)
Article
Engineering, Electrical & Electronic
Fang Hu, Wenjie Ming, Liu Yang, Can Huang, Hongyang Zhao, Shuhong Xie, Zhenxiang Cheng, Tingting Jia
Summary: This article investigates the resistive switching mechanism in solid solution oxides, successfully fabricating binary and ternary solid solution films with switchable polarization, weak magnetism, and reversible resistive switching effects. Multi-stage resistive switching behavior was observed, with the binary film demonstrating four resistive switching states. The dominant role of oxide vacancy/valance exchange-induced defects in the resistive switching effect of complex oxide thin films is discussed.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Shaochuan Chen, Ilia Valov
Summary: Redox-based resistive random access memories (ReRAMs) rely on electrochemical processes involving oxidation and reduction within devices. Material selection plays a crucial role in resistive switching properties. The study explores the impact of materials configuration on redox reactions in HfO2-based ECM and VCM systems, highlighting the influence of capping layer materials and electrode configuration on resistive switching characteristics.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Ruijing Ge, Xiaohan Wu, Liangbo Liang, Saban M. Hus, Yuqian Gu, Emmanuel Okogbue, Harry Chou, Jianping Shi, Yanfeng Zhang, Sanjay K. Banerjee, Yeonwoong Jung, Jack C. Lee, Deji Akinwande
Summary: This study investigates the phenomenon of NVRS effect in 2D non-conductive materials, including TMDs, TMD heterostructures, and atomically thin insulators. The results show low switching voltage, large ON/OFF ratio, and forming-free characteristics in these materials, providing insights for the understanding and applications of defects in 2D materials.
ADVANCED MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
You-Shen Wu, Meng-Hung Tsai, Cheng-Liang Huang
Summary: Amorphous ZrCeOx thin films prepared by sol-gel method exhibit good resistive switching properties. The resistive switching properties are significantly influenced by annealing temperature, film thickness, and top electrode. The optimized device with profound resistive switching performance is a 2-layered ZrCeOx film annealed at 400 degrees C.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2022)
Article
Polymer Science
Kai-Wen Lin, Ting-Yun Wang, Yu-Chi Chang
Summary: By investigating the influence of different top electrode materials on resistive switching behaviors, it was found that the Al/citrus/ITO device exhibited more stable performance and higher ON/OFF ratio due to the fast formation of an aluminum oxide layer. The redox reaction between the aluminum electrode and citrus film played a significant role in the resistive switching properties of these structures.
Article
Chemistry, Physical
Haotian Liang, Chuan Ke, Bai Sun, Shouhui Zhu, Jiangqiu Wang, Chuan Yang, Shuangsuo Mao, Yong Zhao
Summary: In this study, a resistive switching device with the structure of Ag/Ag2O/TiO2/FTO was fabricated using the sol-gel method. The device exhibits bipolar resistive switching characteristics under direct-current-voltage sweep. Specifically, the device with Ag2O/TiO2 layer annealing at 450 degrees C shows a low switching voltage, obvious switching window, stable and distinguishable switching resistances. This device has advantages of low power consumption, remarkable repeatability, excellent endurance, and stable memory state, making it a promising candidate for information storage and processor device in AI applications.
JOURNAL OF MOLECULAR STRUCTURE
(2023)
Article
Engineering, Electrical & Electronic
N. Arun, S. V. S. Nageswara Rao, A. P. Pathak
Summary: In this paper, the resistive switching characteristics of HfO2-based metal-insulator-metal structures with four different metal bottom electrode materials (Au, Al, Pt, and Cu) are systematically investigated. It is found that Au and Pt have lower set and reset voltages, while Pt has a higher resistance ratio (R-off/R-on) of about 10(5). On the other hand, Al and Cu exhibit multilevel switching during the reset process. The oxygen affinity of the bottom electrode is expected to result in the formation of an interfacial layer with the active (HfO2) layer. Furthermore, the conduction mechanisms in the high resistance state (HRS) curves of these devices are studied, and the dominance of the Poole-Frenkel effect at higher voltages (> 1 V) in the HRS curve is observed.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Poh Liang Yap, Kuan Yew Cheong, Hooi Ling Lee, Feng Zhao
Summary: This study successfully investigated the resistive switching memory by preparing pectin thin films at different drying temperatures. The results showed that higher drying temperatures resulted in rougher film surfaces and more internal defect sites. By controlling the conductive paths through oxygen vacancies, high ON/OFF ratio and long retention time were achieved.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Materials Science, Ceramics
Faisal Alresheedi
Summary: Resistive random-access memories are attractive for next-generation non-volatile memories due to their simple structure, fast response, and low power consumption. This study fabricated one-dimensional TiO2 nanorods and evaluated their resistive switching characteristics. The nanocomposite device with embedded SnO2 nanoparticles exhibited superior switching performance and additional features of multilevel data storage.
CERAMICS INTERNATIONAL
(2023)
Article
Materials Science, Ceramics
Wei Zhang, Zhen Guo, Yixian Dai, Jianzhang Lei, Jun Wang, Fangren Hu
Summary: This study investigates the resistive switching behavior of multilayered ReRAM devices by exploring the bilayer microstructure and top electrode configurations. It is found that the top electrode configuration has a significant impact on the switching types, while the bilayer microstructure has a relatively minor influence. Furthermore, modifying the top electrode configuration can greatly improve the switching ratio and reset voltage of the devices.
CERAMICS INTERNATIONAL
(2023)
