Rapid thermal annealing of size-controlled Si nanocrystals: Dependence of interface defect density on thermal budget

Pb(0) centers at the Si-nanocrystal/SiO2 interface as the dominant photoluminescence quenching defect

(2010) Daniel Hiller et al.   JOURNAL OF APPLIED PHYSICS

Nitrogen at theSi-nanocrystal/SiO2interface and its influence on luminescence and interface defects

(2010) Daniel Hiller et al.   PHYSICAL REVIEW B

Paramagnetic point defects at SiO2/nanocrystalline Si interfaces

(2008) A. Stesmans et al.   APPLIED PHYSICS LETTERS

Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals

(2008) M. Jivanescu et al.   JOURNAL OF APPLIED PHYSICS

Formation of light-emitting Si nanostructures in SiO2by pulsed anneals

(2008) G A Kachurin et al.   NANOTECHNOLOGY

Classification and control of the origin of photoluminescence from Si nanocrystals

(2008) S. Godefroo et al.   Nature Nanotechnology

Silicon quantum dot nanostructures for tandem photovoltaic cells

(2007) Gavin Conibeer et al.   THIN SOLID FILMS