Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics

High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

(2011) Linfeng Lan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

(2011) F. J. Klüpfel et al.   JOURNAL OF APPLIED PHYSICS

Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance

(2010) Joon Seok Park et al.   APPLIED PHYSICS LETTERS

Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel

(2008) Sang-Hee K. Park et al.   ADVANCED MATERIALS

High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator

(2008) J. B. Kim et al.   APPLIED PHYSICS LETTERS

High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

(2008) Jong H. Na et al.   APPLIED PHYSICS LETTERS

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

(2008) Jaechul Park et al.   IEEE ELECTRON DEVICE LETTERS

Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors

(2008) Wantae Lim et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B