Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon

Title
Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 6, Pages 063512
Publisher
AIP Publishing
Online
2011-03-19
DOI
10.1063/1.3556756

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