Degradation mechanism beyond device self-heating in high power light-emitting diodes

Technique to evaluate the diode ideality factor of light-emitting diodes

(2010) Hisashi Masui et al.   APPLIED PHYSICS LETTERS

The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties

(2009) Soo-Kun Jeon et al.   APPLIED PHYSICS LETTERS

Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress

(2009) M. Meneghini et al.   IEEE ELECTRON DEVICE LETTERS

Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes

(2009) L Rigutti et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Accelerated Life Test of High Brightness Light Emitting Diodes

(2008) L. Trevisanello et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Performance Degradation of High-Brightness Light Emitting Diodes Under DC and Pulsed Bias

(2008) S. Buso et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Measurement of the junction temperature in high-power light-emitting diodes from the high-energy wing of the electroluminescence band

(2008) Z. Vaitonis et al.   JOURNAL OF APPLIED PHYSICS

A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes

(2008) M. Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

(2008) Sung-Nam Lee et al.   JOURNAL OF ELECTROCERAMICS

Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

(2008) Jianzheng Hu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS