Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3579454
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Funding
- National Natural Science Foundation of China [50532050, 60776011, 60806002, 10874178]
- Chinese Academy of Sciences [KJCX3.SYW.W01]
- Swedish Research Links via VR
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Doping efficiency and optical and electrical properties of the N-doped ZnO films grown on c-sapphire were investigated. An anomalous Raman mode at 275 cm(-1) was observed in the films grown at high Zn temperature, which implied that the films have a large number of defects induced by high N concentration. The intensity ratio of the donor-acceptor pair (DAP)/donor-bound exciton (DX) increases with increasing Zn temperature; this was attributed to the increase of N concentration. The films exhibit a conversion from n-type to p-type conductivity with increasing Zn temperature, and reproducible p-type conductivity was obtained at the Zn temperature of 255 degrees C. This study offers a simple and effective route to enhance the N solubility in ZnO films and confirms that the anomalous Raman mode at 275 cm(-1) was related to substitution of N for O site (N-O) and not related to substitution of N-2 for O site (N-2)(O). (C) 2011 American Institute of Physics. [doi:10.1063/1.3579454]
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