Random barrier double-well model for resistive switching in tunnel barriers

Probing atomic rearrangement events in resistive switching nanostructures

(2010) J. Ventura et al.   APPLIED PHYSICS LETTERS

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

(2010) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Electrical switching in Fe/V/MgO/Fe tunnel junctions

(2010) N. Najjari et al.   PHYSICAL REVIEW B

Tunneling in Double Barrier Junctions with “Hot Spots”

(2010) D. Herranz et al.   PHYSICAL REVIEW LETTERS

Large 1/f noise of unipolar resistance switching and its percolating nature

(2009) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Memristive switching of MgO based magnetic tunnel junctions

(2009) Patryk Krzysteczko et al.   APPLIED PHYSICS LETTERS

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

(2009) A Sokolov et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electrical switching in Fe∕Cr∕MgO∕Fe magnetic tunnel junctions

(2008) D. Halley et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching in CoFeB∕MgO∕CoFeB magnetic tunnel junction

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE