Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3657842
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Funding
- University of Sydney
- CSIRO
- Australian Research Council (ARC)
- National Natural Science Foundation of China [90923005]
- Shanghai Science and Technology Committee [09ZR1414600]
- National ITER Plans Program of China [2009GB105000]
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A simple and effective method of controlling the growth of vertically aligned carbon nanotube arrays in a low-temperature plasma is presented. Ni catalyst was pretreated by plasma immersion ion implantation prior to the nanotube growth by plasma-enhanced chemical vapor deposition. Both the size distribution and the areal density of the catalyst nanoparticles decrease due to the ion-surface interactions. Consequently, the resulting size distribution of the vertically aligned carbon nanotubes is reduced to 50 similar to 100 nm and the areal density is lowered (by a factor of ten) to 10(8) cm(-2), which is significantly different from the very-high-density carbon nanotube forests commonly produced by thermal chemical vapor deposition. The efficiency of this pretreatment is compared with the existing techniques such as neutral gas annealing and plasma etching. These results are highly relevant to the development of the next-generation nanoelectronic and optoelectronic devices that require effective control of the density of nanotube arrays. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657842]
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