Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Electric-Field-Induced Multistep Resistance Switching in Planar VO2/c-Al2O3Structure

(2009) Kunio Okimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions

(2009) Dmitry Ruzmetov et al.   JOURNAL OF APPLIED PHYSICS

On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects

(2009) Gokul Gopalakrishnan et al.   JOURNAL OF MATERIALS SCIENCE

Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition

(2009) Dmitry Ruzmetov et al.   PHYSICAL REVIEW B

Electrostatic modification of infrared response in gated structures based on VO2

(2008) M. M. Qazilbash et al.   APPLIED PHYSICS LETTERS

Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide

(2008) Dmitry Ruzmetov et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films

(2008) Dmitry Ruzmetov et al.   PHYSICAL REVIEW B