Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3357376
Keywords
electrical resistivity; hopping conduction; II-VI semiconductors; semiconductor thin films; sputtered coatings; wide band gap semiconductors; zinc compounds
Categories
Funding
- Taiwan National Science Council [NSC 98-2120-M-009-004]
- MOE ATU
- Chinese Ministry of Educatio [109042]
- NSF of Tianjin City
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We have fabricated oxygen deficient polycrystalline ZnO films by the rf sputtering deposition method. To systematically investigate the charge transport mechanisms in these samples, the electrical resistivities have been measured over a wide range of temperature from 300 K down to liquid-helium temperatures. We found that below about 100 K, the variable-range-hopping (VRH) conduction processes govern the charge transport properties. In particular, the Mott VRH conduction process dominates at higher temperatures, while crossing over to the Efros-Shklovskii (ES) VRH conduction process at lower temperatures. The crossover occurred at temperatures as high as a few tens degrees kelvin. Moreover, the temperature behavior of resistivity over the entire VRH conduction regime from the Mott-type to the ES-type process can be well described by a universal scaling law.
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