Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

(2010) K. Nakahara et al.   APPLIED PHYSICS LETTERS

Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO (0≤x≤0.12) Films on Zn-Polar ZnO Substrates

(2010) Hiroyuki Yuji et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films

(2009) Hiroaki Amaike et al.   Applied Physics Express

Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates

(2009) Kazuto Koike et al.   Applied Physics Express

MgxZn1-xO-Based Schottky Photodiode for Highly Color-Selective Ultraviolet Light Detection

(2008) Masaki Nakano et al.   Applied Physics Express

Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates

(2008) Yoshio Nishimoto et al.   Applied Physics Express

High Electron Mobility Exceeding 104cm2V-1s-1in MgxZn1-xO/ZnO Single Heterostructures Grown by Molecular Beam Epitaxy

(2008) Atsushi Tsukazaki et al.   Applied Physics Express

Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks

(2008) D. C. Oh et al.   APPLIED PHYSICS LETTERS

Performance and Stability of ZnO/ZnMgO Hetero-Metal–Insulator–Semiconductor Field-Effect Transistors

(2008) Shigehiko Sasa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy

(2008) D. Takamizu et al.   JOURNAL OF APPLIED PHYSICS